Paper
1 May 1986 A Silicon Drift Chamber for Two-Dimensional Particle Detection
H. Becker, H. Dietl, E. Gatti, P. Holl, J. Kemmer, R. Klanner, A. Longoni, G. Lutz, P. Rehak, A. Wylie
Author Affiliations +
Proceedings Volume 0591, Solid-State Imagers and Their Applications; (1986) https://doi.org/10.1117/12.952072
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
Abstract
Semiconductor drift chambers have been recently proposed for particle detection. Their functional principle is similar to gas drift chambers: under the influence of an electric field charge carriers (electrons) are drifting to an anode, where they can be used for energy and/or position measurements.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Becker, H. Dietl, E. Gatti, P. Holl, J. Kemmer, R. Klanner, A. Longoni, G. Lutz, P. Rehak, and A. Wylie "A Silicon Drift Chamber for Two-Dimensional Particle Detection", Proc. SPIE 0591, Solid-State Imagers and Their Applications, (1 May 1986); https://doi.org/10.1117/12.952072
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KEYWORDS
Silicon

Semiconducting wafers

Sensors

Electrons

Particles

Aluminum

Imaging systems

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