Paper
27 October 2017 Taking a SHARP look at mask 3D effects
Markus P. Benk, Weilun Chao, Ryan Miyakawa, Kenneth Goldberg, Patrick Naulleau
Author Affiliations +
Abstract
Mask 3D effects are an area of active research in EUV mask technology. Mask-side numerical aperture, illumination, feature size and absorber thickness are key factors modulating mask 3D effects and affecting printability and process window. Variable mask-side NA and flexible illumination make the SHARP actinic EUV microscope a powerful instrument for the study of mask 3D effects. We show an application example, comparing mask 3D effects for a standard Tantalum Nitride absorber and a thinner, 40-nm Nickel absorber. Data is presented for 0.33 4xNA and anamorphic 0.55 4x/8xNA. The influence of different illumination settings on mask 3D effects is discussed.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Markus P. Benk, Weilun Chao, Ryan Miyakawa, Kenneth Goldberg, and Patrick Naulleau "Taking a SHARP look at mask 3D effects", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500Y (27 October 2017); https://doi.org/10.1117/12.2281109
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Extreme ultraviolet

Extreme ultraviolet lithography

Imaging systems

Lenses

EUV optics

Microscopes

RELATED CONTENT

EUV lithography: NXE platform performance overview
Proceedings of SPIE (April 17 2014)
EUV High NA scanner and mask optimization for sub 8...
Proceedings of SPIE (November 16 2015)
Alternative reticles for low-k1 EUV imaging
Proceedings of SPIE (September 26 2019)
EUV mask simulation for AIMS
Proceedings of SPIE (December 17 2003)
Actinic review of EUV masks
Proceedings of SPIE (March 20 2010)

Back to Top