Characterization of EBL2 EUV exposure facility

Edwin te Sligte; Michel van Putten; Freek T. Molkenboer; Peter van der Walle; Pim M. Muilwijk; Norbert B. Koster; Jeroen Westerhout; Peter J. Kerkhof; Bastiaan W. Oostdijck; Wouter Mulckhuyse; Alex F. Deutz

doi:10.1117/12.2280356

16 October 2017 Characterization of EBL2 EUV exposure facility

Edwin te Sligte, Michel van Putten, Freek T. Molkenboer, Peter van der Walle, Pim M. Muilwijk, Norbert B. Koster, Jeroen Westerhout, Peter J. Kerkhof, Bastiaan W. Oostdijck, Wouter Mulckhuyse, Alex F. Deutz

Author Affiliations +

Proceedings Volume 10450, International Conference on Extreme Ultraviolet Lithography 2017; 1045027 (2017) https://doi.org/10.1117/12.2280356
Event: SPIE Photomask Technology and EUV Lithography, 2017, Monterey, California, United States

Abstract

TNO has built EBL2; a facility for EUV exposure testing and surface analysis. EBL2 is capable of testing EUV optics, EUV photomasks, pellicles, and other components under controlled conditions, relevant to EUV scanner and source operation at all foreseen source power nodes. The system consists of an EUV beam line coupled to an X-ray Photoelectron Spectroscopy system by an automated sample handler. The current contribution reports on the results of the qualification testing of the EUV beam line. Topics investigated include handling and position control, thermal management, a relevant gas environment, EUV irradiation and metrology, and first EUV exposures.

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Edwin te Sligte, Michel van Putten, Freek T. Molkenboer, Peter van der Walle, Pim M. Muilwijk, Norbert B. Koster, Jeroen Westerhout, Peter J. Kerkhof, Bastiaan W. Oostdijck, Wouter Mulckhuyse, and Alex F. Deutz "Characterization of EBL2 EUV exposure facility", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045027 (16 October 2017); https://doi.org/10.1117/12.2280356

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