Design and fabrication of Bragg-grating-coupled high Q-factor ring resonator using liquid-source CVD-deposited Si3N4 film at 150deg C (Conference Presentation)

Xiaoyang Cheng; Jianxun Hong; Shiyoshi Yokoyama

doi:10.1117/12.2289217

14 March 2018 Design and fabrication of Bragg-grating-coupled high Q-factor ring resonator using liquid-source CVD-deposited Si₃N₄ film at 150°C (Conference Presentation)

Xiaoyang Cheng, Jianxun Hong, Shiyoshi Yokoyama

Author Affiliations +

Proceedings Volume 10535, Integrated Optics: Devices, Materials, and Technologies XXII; 1053510 (2018) https://doi.org/10.1117/12.2289217
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

In this work, authors report for the first time on CMOS-compatible integrated micro-ring resonators with Bragg gratings coupled at both bus ends using a high quality Si3N4 film deposited by the liquid source CVD (LSCVD) method at ultra-low temperature of 150 ºC. Generally, the Si3N4 films deposited by either LPCVD or PECVD have demonstrated high tensile stress which prevents a thicker film deposition greater than 250 nm-thick with low loss state. Considering above, LSCVD is developed to fabricate the high quality Si3N4 films of several micrometers thickness without the limitation of cracking using the liquid SiN-X source at only 150 ºC, which guaranteed Kerr-based nonlinearity while featured high thermal compatibility with existing front-end electronic devices and silicon photonics especially those involving flexible/organic substrate. Furthermore, LSCVD deposition without needing SiH4 and NH3 chemistry also avoided the dangling Si-H and N-H bonds, which usually occur to PECVD and LPCVD and required extra 1200 ºC post-annealing to overcome such intrinsic absorption loss in C-band. We demonstrated high Q-factor ring resonators in this Si3N4 films, showing Q-value of over 1.3 × 10^5. A 3-dB bandwidth of around 70 nm for grating coupler was also achieved with 1550 nm central wavelength, while the coupling efficiency from fiber to grating is less than 4 dB. In this case, the measured spectral bandwidth can cover most of operating frequency of C-band and L-band. The LSCVD deposited Si3N4 is therefore a promising CMOS-compatible integration platform for nonlinear functional devices and circuits at telecommunication wavelengths.

Conference Presentation

Citation Download Citation

Xiaoyang Cheng, Jianxun Hong, and Shiyoshi Yokoyama "Design and fabrication of Bragg-grating-coupled high Q-factor ring resonator using liquid-source CVD-deposited Si₃N₄ film at 150°C (Conference Presentation)", Proc. SPIE 10535, Integrated Optics: Devices, Materials, and Technologies XXII, 1053510 (14 March 2018); https://doi.org/10.1117/12.2289217

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Resonators

Liquids

Chemical vapor deposition

Fiber Bragg gratings

Integrated optics

Low pressure chemical vapor deposition

Photonic crystals

Show All Keywords

Keywords/Phrases

Search In:

Publication Years