Rapid delamination of GaN coatings with femtosecond laser lift-off technique

Domas Paipulas; Simas Butkus; Valdas Sirutkaitis

doi:10.1117/12.2507196

4 March 2019 Rapid delamination of GaN coatings with femtosecond laser lift-off technique

Domas Paipulas, Simas Butkus, Valdas Sirutkaitis

Proceedings Volume 10906, Laser-based Micro- and Nanoprocessing XIII; 109060H (2019) https://doi.org/10.1117/12.2507196
Event: SPIE LASE, 2019, San Francisco, California, United States

Abstract

In this work we present femtosecond laser lift off (LLO) technique for GaN coating separation from sapphire substrates. We demonstrate that using rapid raster scanning technique it is possible to achieve successful delamination of GaN coatings with low surface roughness without any stitching artifacts and at industrial processing rate. Several delamination regimes can be identified in femtosecond LLO: thermal decomposition, stress induced peeling. These results show that femtosecond laser LLO could surpass nanosecond LLO by the achieved quality and overall control of delamination processes.

Citation Download Citation

Domas Paipulas, Simas Butkus, and Valdas Sirutkaitis "Rapid delamination of GaN coatings with femtosecond laser lift-off technique", Proc. SPIE 10906, Laser-based Micro- and Nanoprocessing XIII, 109060H (4 March 2019); https://doi.org/10.1117/12.2507196

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available