High performance GaN/AlGaN ultraviolet avalanche photodiode detector technologies

Ashok K. Sood; John W. Zeller; Parminder Ghuman; Sachidananda Babu; Russell D. Dupuis

doi:10.1117/12.2521464

13 May 2019 High performance GaN/AlGaN ultraviolet avalanche photodiode detector technologies

Ashok K. Sood, John W. Zeller, Parminder Ghuman, Sachidananda Babu, Russell D. Dupuis

Proceedings Volume 10980, Image Sensing Technologies: Materials, Devices, Systems, and Applications VI; 109800M (2019) https://doi.org/10.1117/12.2521464
Event: SPIE Defense + Commercial Sensing, 2019, Baltimore, MD, United States

Abstract

Detection of ultraviolet (UV) bands provides distinct advantages for NASA, defense, and commercial applications, including increased spatial resolution, small pixel sizes, and large format arrays. Al_xGa₁-_xN semiconductor alloys have attracted great interest for detection in the UV spectral region because of their potential for high optical gain, high sensitivity, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs that demonstrate consistent and reliable UV-APD performance and operation. For these UV detectors we have measured gains of above 5×10⁶ and high quantum efficiencies at ~350 nm enabled by a strong avalanche multiplication process. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized GaN/AlGaN UV-APD material growth and doping parameters. The high performance, variable-area GaN/AlGaN UV-APD detectors and arrays can be customized to a wide variety of sizes including large-area formats to enable sensing and high-resolution detection over UV bands of interest.

Citation Download Citation

Ashok K. Sood, John W. Zeller, Parminder Ghuman, Sachidananda Babu, and Russell D. Dupuis "High performance GaN/AlGaN ultraviolet avalanche photodiode detector technologies", Proc. SPIE 10980, Image Sensing Technologies: Materials, Devices, Systems, and Applications VI, 109800M (13 May 2019); https://doi.org/10.1117/12.2521464

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