Overlay marks contrast plays such a fundamental role for the overlay metrology that it dominants the accuracy control and draws much attention during mark evaluations. However, as the lithography nodes advances and the 3D device stacks accumulate, overlay marks sub-segmentation and opaque hard-masks are widely exploit, both of which can be drawbacks for mark contrast in certain cases. As a result, the overlay mark contrast improvement techniques become a necessity, and attract more research interests. In this paper, we introduced a method to improve the mark contrast by using pixel improvement technique and theoretical reference correlation analysis. Such method can potentially be very effective when measuring overlay marks with extreme low contrast through thick opaque layers.
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