Source optimization for forbidden pitch resolving in metal layer of 5nm technology node

Ling Ma; Lisong Dong; Taian Fan; Yayi Wei

doi:10.1117/12.2614008

26 May 2022 Source optimization for forbidden pitch resolving in metal layer of 5nm technology node

Ling Ma, Lisong Dong, Taian Fan, Yayi Wei

Proceedings Volume 12052, DTCO and Computational Patterning; 1205218 (2022) https://doi.org/10.1117/12.2614008
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Conference Poster

Abstract

Forbidden pitches (FPs) effect is directly related to the loss of process window, which is caused by the difference of diffraction orders of patterns in some pitches. This paper analyzes the FPs effects in extreme ultraviolet (EUV) lithography based on the rigorous imaging simulation and process window evaluation. In the rigorous simulation, S-litho is used to analyze the normalized image log slope of test patterns from critical layer, which allow us to find the weak pitches. Then, the process windows of these test patterns are evaluated using the lithography simulator Proteus WorkBench. This can find out the accurate FPs from the range of weak pitches. Finally, the strategy of mitigating the negative effect of FPs is proposed with the help of source optimization. Unlike deep ultraviolet lithography, the difference of FPs between vertical and horizontal direction is presented in the paper. The simulation results have effectively been used design rules.

Conference Presentation

Citation Download Citation

Ling Ma, Lisong Dong, Taian Fan, and Yayi Wei "Source optimization for forbidden pitch resolving in metal layer of 5nm technology node", Proc. SPIE 12052, DTCO and Computational Patterning, 1205218 (26 May 2022); https://doi.org/10.1117/12.2614008

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