Film thickness dependence of electrical hysteresis and Hall effect of thermochromic VO2 thin films

Adil Driouach; B. Abdel Samad; P. V. Ashrit

doi:10.1117/12.2647941

31 January 2023 Film thickness dependence of electrical hysteresis and Hall effect of thermochromic VO₂ thin films

Adil Driouach, B. Abdel Samad, P. V. Ashrit

Proceedings Volume 12477, International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022; 1247709 (2023) https://doi.org/10.1117/12.2647941
Event: International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors, 2022, Boston, Massachusetts, United States

Abstract

Vanadium dioxide (VO₂) is a very well-known thermochromic material exhibiting a very effective first order semiconductor to metal (SMT) transition at a temperature of around 68°C. In this work we have investigated the thermochromic properties of VO₂ thin films as a function of film thickness. The VO₂ films were deposited by a two-step method on glass substrates. The changes occurring around the SMT have been systematically characterized by structural, optical, electrical, magnetic studies and their hysteresis cycles. The correlation between film thickness and transition temperature has been established for the VO₂ films from the resistance variation during the heating and cooling cycles. The Hall voltage variation as a function of magnetic field has been measured for each of the VO₂ film thicknesses. These Hall voltage measurements have enabled us to calculate the free electron density above and below the transition temperature for each of the VO₂ samples. The free electron density changes conform to the semiconductor to metal transition observed and to the values mentioned in the literature.

Citation Download Citation

Adil Driouach, B. Abdel Samad, and P. V. Ashrit "Film thickness dependence of electrical hysteresis and Hall effect of thermochromic VO₂ thin films", Proc. SPIE 12477, International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022, 1247709 (31 January 2023); https://doi.org/10.1117/12.2647941

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KEYWORDS

Thin films

Resistance

Vanadium

Magnetism

Switching

Temperature metrology

Transition metals

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