Paper
15 August 2023 Development of a full-field polarization interferometer for measurement of wafer surface profile
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Abstract
This research presents a novel polarization interferometer using a polarization camera for accurate and reliable wafer surface profile measurement. The proposed technique employs Fizeau-type polarization interferometry to acquire polarization interference patterns, from which four phase-quadrature interference patterns are obtained. By applying a phase-shifting algorithm, the wafer surface profile can be determined. Experimental testing demonstrates the effectiveness of the proposed system, offering precise and accurate results. Compared to existing techniques, it offers advantages such as high measurement resolution, fast measurement speed, and full-field capability. These features make it a promising solution for improving quality control and manufacturing efficiency in the semiconductor industry, leading to enhanced product performance and increased competitiveness.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yue-Jhe Tsai, Hsing-Hsien Tsai, Ju-Yi Lee, and Hung-Lin Hsieh "Development of a full-field polarization interferometer for measurement of wafer surface profile", Proc. SPIE 12618, Optical Measurement Systems for Industrial Inspection XIII, 1261835 (15 August 2023); https://doi.org/10.1117/12.2678117
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KEYWORDS
Polarization

Semiconducting wafers

Cameras

Fizeau interferometers

Interferometers

Interferometry

Manufacturing

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