Switching between topological edge states using phase-change materials

Georgios Veronis; Yin Huang; Yuecheng Shen

doi:10.1117/12.2677837

4 October 2023 Switching between topological edge states using phase-change materials

Georgios Veronis, Yin Huang, Yuecheng Shen

Proceedings Volume 12647, Active Photonic Platforms (APP) 2023; 1264707 (2023) https://doi.org/10.1117/12.2677837
Event: SPIE Nanoscience + Engineering, 2023, San Diego, California, United States

Abstract

We introduce non-Hermitian plasmonic waveguide-cavity structures based on the Aubry-Andre-Harper model to realize switching between right and left topological edge states using the phase-change material germanium-antimony- tellurium (GST). The structure unit cells consist of a metal-dielectric-metal (MDM) waveguide side-coupled to MDM stub resonators with modulated distances between adjacent stubs. In such structures the modulated distances introduce an effective gauge magnetic field. We show that switching between the crystalline and amorphous phases of GST leads to a shift of the dispersion relation of the optimized structure so that a right topological edge state for the crystalline phase, and a left topological edge state for the amorphous phase occur at the same frequency. Thus, we realize switching between right and left topological edge states at that frequency by switching between the crystalline and amorphous phases of GST. Our results could be potentially important for developing compact reconfigurable topological photonic devices.

Conference Presentation

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Georgios Veronis, Yin Huang, and Yuecheng Shen "Switching between topological edge states using phase-change materials", Proc. SPIE 12647, Active Photonic Platforms (APP) 2023, 1264707 (4 October 2023); https://doi.org/10.1117/12.2677837

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