Hot electron instabilities and light emission in GaAs quantum wells

Naci Balkan; Brian K. Ridley

doi:10.1117/12.24317

1 March 1991 Hot electron instabilities and light emission in GaAs quantum wells

Naci Balkan, Brian K. Ridley

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24317
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

In n-type GaAs/Gai. xAlxAs single double and multiple quantum wells continuous oscillations in the current occur when electric fields in excess of a few hundred volts cm1 are applied along the layers. The frequency of the oscillations increases with the electric field and the electron concentration over a range of frequencies up to the gegahertz region. A strong electroluminescence (EL) signal is observed at and above the threshold field of the instabilities. The intensity of the EL signal increases with electric field as ''EL Fs where s is typically s 5. The EL spectra peaks at an energy close to the PL spectra. EL is shown to be associated with hot electron recombination and it is speculated that it originates in p-channels in the well adjacent to the AlGaAs cladding. The study provides a technique which can be used as a tool to determine the quality of GaAs quantum wells.

Citation Download Citation

Naci Balkan and Brian K. Ridley "Hot electron instabilities and light emission in GaAs quantum wells", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24317

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