Paper
26 June 1992 High-power TQW AlGaAs laser with new inner-stripe structure
Akihiro Shima, T. Miura, T. Shiba, Tomoko Kadowaki, N. Hayafuji, Motoharu Miyashita, S. Karakida, Nobuaki Kaneno, H. Kizuki, Etsuji Omura, Masao Aiga, Kenji Ikeda
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Abstract
An approach to mass-production of triple quantum well lasers with a buried-ridge, loss-guided inner-stripe structure is demonstrated, using a large-scale metalorganic chemical vapor deposition. The lasers obtained from nine epi-wafers grown at one time show the uniform characteristics. In regard to high-power characteristics, the fundamental transverse mode up to 100mW and the maximum output power of - 170mW are realized at room temperature. Even at 95 C, the light output power of 100mW is obtained. The lasers have been operating over 1000 hours without failure at 6O C, 50mW. To realize the further uniformity and reproducibility of the laser characteristics, we have Introduced a newly developed etching method with an etching stop layer in the ridge formation.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akihiro Shima, T. Miura, T. Shiba, Tomoko Kadowaki, N. Hayafuji, Motoharu Miyashita, S. Karakida, Nobuaki Kaneno, H. Kizuki, Etsuji Omura, Masao Aiga, and Kenji Ikeda "High-power TQW AlGaAs laser with new inner-stripe structure", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59151
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Cited by 2 scholarly publications.
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KEYWORDS
Semiconductor lasers

Etching

High power lasers

Semiconducting wafers

Laser applications

Cladding

Metalorganic chemical vapor deposition

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