Paper
26 June 1992 Infrared laser cathode ray tubes of high efficiency at room temperature
Boris M. Lavrushin
Author Affiliations +
Abstract
It is shown that in homogeneous GaAs surface emitting cavity the laser efficiency may be high enough owing to the cavity passive part bleaching, induced by optical field in the laser cavity. The external differential efficiency of 19 and 5.7 % , obtained at 77 and 300 K, respectively, are limited only by a free carrier absorption both in active and passive parts of the cavity. The further laser efficiency improvement is obtained in the variable-gap GaA1As heterostructure,in which the narrow-gap side is used as the cavity active part. The room temperature laser emission of S watts power and external differential efficiency of 14% have been obtained in the GaA1As with grad Eg 3-4 eV/mm under electron beam of 0.6 mA current at the electron energy of 75keV.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris M. Lavrushin "Infrared laser cathode ray tubes of high efficiency at room temperature", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59165
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Absorption

Laser energy

Gallium arsenide

Semiconductor lasers

Electron beams

Heterojunctions

Laser resonators

RELATED CONTENT

Photoluminescence upconversion in GaAs quantum wells
Proceedings of SPIE (February 09 2009)
Introduction To Diode Lasers
Proceedings of SPIE (February 25 1981)
Grazing-incidence-slab semiconductor laser (GRISSL)
Proceedings of SPIE (February 05 2008)
Progress in semiconductor lasers pumped by cathode rays
Proceedings of SPIE (June 28 2001)

Back to Top