Utilizing an optical cavity to increase the saturation level in a Schottky-barrier IR image sensor

Akihito Tanabe; Shigeru Tohyama; Nobukazu Teranishi; Kazuo Konuma; Kouichi Masubuchi; Hiroaki Utsumi

doi:10.1117/12.160548

1 November 1993 Utilizing an optical cavity to increase the saturation level in a Schottky-barrier IR image sensor

Akihito Tanabe, Shigeru Tohyama, Nobukazu Teranishi, Kazuo Konuma, Kouichi Masubuchi, Hiroaki Utsumi

Proceedings Volume 2020, Infrared Technology XIX; (1993) https://doi.org/10.1117/12.160548
Event: SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, 1993, San Diego, CA, United States

Abstract

A precise evaluation of the photodiode storage capacitance in a platinum silicide Schottky- barrier IR image sensor with an optical cavity and in which an aluminum reflector is electrically grounded has revealed that the cavity capacitance between the aluminum reflector and the platinum silicide film, which is one of four components in the photodiode storage capacitance, is dominant. While this area of the photodiode has previously been investigated for its optical characteristics, the present study represents the first reported investigation on its electrical characteristics. In order to increase the saturation level of an image sensor, it is essential to increase the storage capacitance in its photodiode. The storage capacitance in the photodiode was shown to be increased not only by newly using but also by increasing the cavity capacitance. When the SiO₂ film between the aluminum reflector and the platinum silicide film was replaced with SiN, total storage capacitance in the photodiode was successfully increased by a factor of 1.6, while the optical characteristics of the photodiode remained the same.

Citation Download Citation

Akihito Tanabe, Shigeru Tohyama, Nobukazu Teranishi, Kazuo Konuma, Kouichi Masubuchi, and Hiroaki Utsumi "Utilizing an optical cavity to increase the saturation level in a Schottky-barrier IR image sensor", Proc. SPIE 2020, Infrared Technology XIX, (1 November 1993); https://doi.org/10.1117/12.160548

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