Magnetoresistance oscillation of Si delta-doping GaAs multiple quantum well

Guozhen Zheng; Yayi Wei; Shaoling Guo; Dingyuan Tang; Zhenfu Peng; Yunqiang Zhang

doi:10.1117/12.190803

26 October 1994 Magnetoresistance oscillation of Si delta-doping GaAs multiple quantum well

Guozhen Zheng, Yayi Wei, Shaoling Guo, Dingyuan Tang, Zhenfu Peng, Yunqiang Zhang

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190803
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

By using the MBE technique, we fabricated a GaAs film which contains three Si (delta) -doping layers, which form a three QW structure. Transverse magnetoresistance, longitudinal magneto-resistance and Hall resistance have been measured at low temperature from 0.3 K to 4.2 K and high magnetic field up to 7 T. SdH oscillation of the transverse magnetoresistance and diamagnetic SdH oscillation of the longitudinal magnetoresistance have been observed. Based on the experimental results, mechanism of the longitudinal oscillation and the Hall oscillation have been discussed.

Citation Download Citation

Guozhen Zheng, Yayi Wei, Shaoling Guo, Dingyuan Tang, Zhenfu Peng, and Yunqiang Zhang "Magnetoresistance oscillation of Si delta-doping GaAs multiple quantum well", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190803

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