New fabrication techniques for high dynamic range tunneling sensors

David T. Chang; Fred P. Stratton; Randall L. Kubena; Deborah J. Vickers-Kirby; Richard J. Joyce; Thomas R. Schimert; Roland W. Gooch

doi:10.1117/12.395643

15 August 2000 New fabrication techniques for high dynamic range tunneling sensors

David T. Chang, Fred P. Stratton, Randall L. Kubena, Deborah J. Vickers-Kirby, Richard J. Joyce, Thomas R. Schimert, Roland W. Gooch

Author Affiliations +

Proceedings Volume 4176, Micromachined Devices and Components VI; (2000) https://doi.org/10.1117/12.395643
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States

Abstract

We have developed high dynamic range (10⁵-10⁶ g's) tunneling accelerometers^1,2 that may be ideal for smart munitions applications by employing both surface and bulk micromachining processing techniques. The highly miniaturized surface-micromachined devices can be manufactured at very low cost and integrated on chip with the control electronics. Bulk-micromachined devices with Si as the cantilever material should have reduced long-term bias drift as well as better stability at higher temperatures. Fully integrated sensors may provide advantages in minimizing microphonics for high-g applications. Previously, we described initial test results using electrostatic forces generated by a self-test electrode located under a Au cantilever³. In this paper, we describe more recent testing of Ni and Au cantilever devices on a shaker table using a novel, low input voltage (5 V) servo controller on both printed wiring board and surface-mount control circuitry. In addition, we report our initial test results for devices packaged using a low-temperature wafer-level vacuum packaging technique for low-cost manufacturing.

Citation Download Citation

David T. Chang, Fred P. Stratton, Randall L. Kubena, Deborah J. Vickers-Kirby, Richard J. Joyce, Thomas R. Schimert, and Roland W. Gooch "New fabrication techniques for high dynamic range tunneling sensors", Proc. SPIE 4176, Micromachined Devices and Components VI, (15 August 2000); https://doi.org/10.1117/12.395643

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