As the infrared technology continues to advance, there is a growing demand for multispectral detectors and quantum well GaAs/AlGaAs photodetectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolor capability in these regions. The main challenges facing all multicolor devices are more complicated device structures, thicker and multilayer material growth, and more difficult device fabrication, especially when the array size gets larger and pixel size gets smaller. In the paper recent progress in development of two-color HgCdTe photodiodes and quantum well infrared photodetectors is presented.

A technology was designed and the photodetector modules were manufactured for the 3-5 and 8-12 micrometers spectral range based on the Hg_1-xCd_xTe/GaAs heterostructures and GaAs/AlGaAs multiquantum well structures grown by the molecular beam epitaxy method. The photosensitive HgCdTe layers were grown on the GaAs substrates with the intermediate buffer layer of CdZnTe. To decrease the surface influence on the recombination processes graded gap HgCdTe layers with the increase to the surface composition were grown. A silicon multiplexer was designed and manufactured on the CMOS/CCD technology with frame rate 50 Hz. Hybrid assembly of the photodetectors array and the multiplexer was produced by the group cold welding on the indium bumps with control of the connection process. The manufactured 128 x 128 FPAs on the HgCdTe with the cut- off wavelength 6 micrometers and 8.7 micrometers had the NEDT value 0.02 K and 0.032 K, correspondingly, at operating temperature 78K and frame rate 50Hz. The photosensitive GaAs/AlGaAs multiquantum well structures were manufactured by the MBE method. It is shown that the designed technology allows to produce 129 x 128 photodetector arrays ((lambda) _max=8 mum) with the NEDT value 0.021 K and 0.06 K at operating temperature of 54 K and 65 K, correspondingly.

LWIR staring at 384x288 focal plane array (FPA) have been developed and investigated. FPAs are manufactured on the base of mercury cadmium telluride epitaxial layers grown both by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). 384x288 FPA consists of a MCT photodiodes array formed in the p-type layer by ion implantation and silicon MOS-multiplexer. The photodiodes array pitch in each direction is 35 micrometers . Multiplexer performs the photocurrents integration during line period, signals multiplexing and output form the focal plane. MCT photovoltaic array and MOS-multiplexer are bonded together by indium bumps. Sensitive unit is packaged in a metal dewar and cooled down to temperature 80 K. Average detectivity was more than 1.5x10¹⁰W^-1cm/s^-1/2 for FPA with cutoff wavelength of 11.9 micrometers at T=80K. Test IR system on the base of FPA was developed to obtain IR-images in real time mode with frame frequency 25 Hz. Test IR system performs two-point image correction and defective elements replacement.

In this paper the experimental results on designing of 128X128 FPA for far IR spectrum range are presented. The module is a hybrid assembly of the photodetectors array based on GaAs/AlGaAs multiquantum wells and silicon multiplexer. The noise equivalent difference of temperature of the photodetector module NEDT=0.067 K at T=65 K.

The performance of an IR detector in an area array has been studied by numerically solving the 2-D diffusion equation for thermal and photo-generated carriers. The zero-bias resistance area product, R_oA, quantum efficiency (eta) and the noise equivalent temperature difference, NETD, for diodes of different size and junction depth have been calculated for long wavelength infrared (LWIR) HgCdTe n⁺-on-p diffusion-limited diodes in the back-side illuminated configuration. The results of R_oA have been compared with analytical expressions, both in special and general cases. The highest R_oA is obtained for low junction depths and diodes with very little dead space. Small diodes have low (eta) , but their integration time can be increased. The temporal NETD is then almost independent of diode geometry. In the 2-D calculations, thermally generated carriers and photocarriers that originate under the junction (the normal current) as well as those that originate from around the junction (the lateral current) have been incorporated. The above study has been carried out using a uniform grid in the solution of the diffusion equation to obtain the carrier concentration profiles. The calculation of the diffusion currents- of both optical and thermally generated carriers- has been done using trapezoidal grid points, which are better suited to the symmetry of a diode in an area array. The present results are compared with previous calculations in which a uniform grid was used in the complete calculations. The results of R_oA and (eta) differ by as much as 25% between the uniform and trapezoidal grids.

For manufacture of focal plane arrays (FPA) the MBE grown heteroepitaxial structures GaAs/CdZnTe/CdHgTe with cut-off wavelength ((lambda) _c) of 6.0 and 8.7 micrometers were used. The photosensitive CdHgTe layer was grown with special composition profile in depth being continuously controlled in the growth process. On these structures by the method of low temperature planar technology the 128x128 photodetector arrays were manufactured, including the ones with low series resistance for the far IR range. The read-out circuit was designed and silicon array multiplexers were manufactured CMOS technology with n- pocket. The read-out circuit allows to control the accumulation time at a fixed frame time. The technology of hybrid assembling with continuous control over cold welding on indium bumps was designed and the 128X128 FPAs were fabricated by means of this technology. The noise-equivalent difference of temperature (NEDT) value was 19.7 and 27.2 mK for modules with (lambda) _c=6.0 micrometers and 8.7 micrometers correspondingly at the background temperature 77K. Using the IR camera the examples of IR images obtained by the fabricated FPAs with the 128x128 frame format are demonstrated.

Specific design features of array IR SB CCDs, allowing improvements in the threshold sensitivity and the MTF shape and providing optimum operation of IR cameras detecting remote quasipoint radiation sources, are discussed. Some results in an application of IR camera with an IR SB PtSi- CCD array for the wavelength range from 2 micrometers to 5 micrometers are reported.

This paper presents the structure and technology of 65- elements linear array of membrane type microbolometers, and the research results of its properties. DC biased microbolometers with VO_x thermosensitive layer have detectivity of 5x10⁷ cm/Hz^1/2W at 12.5 Hz at 12.5 Hz frequency, and response time of 3 ms. The ways of improvement of developed linear array sensitivity are planed.

A program model and relative software tool has been developed allowing to simulate transformations of different physical nature the initial image undergo while passing through electro-optical path of IR TDI system. The program consists of appropriate successively processed units, considering influence of atmosphere, optics, scanning, photodetector (PD) and multiplexer, on initial thermal image. The developed software is intended to be an everyday-practice focal plane arrays (FPAs) engineer's tool for optimizing PD and multiplexer structure and tradeoff analysis. In addition, the software was developed as a first part of more general program now under design, which allows one to estimate the effectiveness of different methods and algorithms of image reconstruction from TDI-rows output data. The software is especially useful in the cases of relatively complex arrangement of photodetector apertures, and/or when image motion trajectory in the focal plane is non-ideal (e.g., skewed with respect to its normal direction, or waved-form), which are the cases in practical systems. The main features of the designed model are described and some advantages of the program are discussed. The preliminary results on the image processing in practical middle-wave infrared (MWIR) TDI system are given demonstrating the influence of various system parameters on final image quality and confirming the validity of the model.

Single element and linear array photodetectors operating in heterodyne mode for CO₂ laser radiation detection have been developed and investigated. P-type mercury cadmium telluride (MCT) crystal with x=0.21 composition and hole concentration 1x10¹⁶ cm^-3 at T=77K were used as substrates. The p-n junctions in p-type MCT were formed by ion implantation. Detector was packaged in metal-glass dewar together with preamplifier. Cooling was performed by liquid nitrogen. Single-element heterodyne detector with p- n junction area 300X300 micrometers operates at frequencies up to 100 MHz. The noise equivalent power (NEP) at 10,6 micrometers wavelength is equal to 5x10²⁰ W/Hz for an applied local oscillator power 0,5 mW. 10-element photodiode linear array heterodyne detector been developed and investigated.

Different aspects of research, development and application of long wavelength Pds are considered in connection with technological problems of high-efficiency epitaxial structures synthesis. Data are presented for Pds based on Si, silicon-on-sapphire structures (SOS), InGaAsP alloys and allowing to overlap spectral range up to 2 micrometers . The importance of lattice mismatch overcoming is emphasized in order to fabricate high-efficiency Pds. It is shown that owing to high performance characteristics these Pds can be used in wide applications range, including fiber data link, remote control, instrumentation applications, spectroscopy etc.

The effect of epilayer structural peculiarities on electro- physical properties of the epilayers and on parameters of the UV photodetectors has been investigated. Random distribution of charged centers, which is associated with boundaries of mosaic structure domains being typical of III- nitrides, has been shown to result in a low Schottky barrier height, a high leakage current, and persistent photoconductivity in an undoped GaN. The introduction of low Si concentration minimized the effect as well as allows the Schottky barrier height to be obtained close to the difference between work functions of GaN and metal. The characteristics of Al_0,1Ga_0.9N Schottky barrier photodetectors have been given. MSM photodetectors and Schottky barrier photodetectors over spectral range 200-365 nm with characteristics close to those of the best analogs, in particular, leakage current density of about 10^-8A cm^-2, have been obtained using domestic GaN grown by MOCVD on sapphire substrates of (0001) orientation.

An analytical expression for dark voltage-current characteristics (VCC) of double layer heterojunction (DLHJ) photodiode. It is shown that spatial inhomogeneity of energy band gap in photodiode base region allows to substantially increase the reverse current connected with thermal generation of carriers both in the base region and at the contacts. In the case when wide gap layer is remote from the metallurgical edge of p-n junction at the distance comparable with the thickness of the space charge region (SCR) a portion of negative differential resistance (NDR) may appear on the reverse branch of VCC.

The n⁺-p junctions formed by ion implantation in p- type Hg_0.6Cd_0.4Te crystals are studied. It is found that leakage current of the structures at liquid nitrogen temperature is strongly dependent on the conditions during cooling from room temperature; leakage current is small after bias-off cooling and several decades higher after bias-on cooling. Both states are stable at 78 K during hours independent of bias; the reversible transitions between the states can be performed by room temperature annealing and subsequent cooling under appropriate bias. Investigations of the structures by the DLTS technique show that the variations of leakage current are accompanied by transformations of deep level spectrum of the crystal and, therefore, can be associated with the reconstruction of metastable centers located in the space charge region of the junctions. The kinetics of the metastable transitions indicates possible spreading of the transition activation energy due to local inhomogeneity of the alloy composition.

In this work the results on the investigation of the photosensitivity near the IR region, of CdS_1-xSe_x (0 less than or equal to x less than or equal to 0.4) films 8 divided by 9 micrometers thick prepared on glass-ceramic substrates by precipitation from aqueous solutions are presented. The temperature dependence of dark and light conductivity, spectrum and optical quenching of primary and impurity photoconductivity are investigated. The obtained results show that when controlling ionic composition and heat-treatment (HT) conditions, one can purposely control the properties of CdS_1-xSe_x (0 less than or equal to x less than or equal to 0.4) films, achieve the appropriate degree of compensation of different recombination levels and traps attributed to intrinsic defects or impurities, which result in high level of photoelectrical parameters near the IR region. Just after deposition the photoconductivity spectrum maximum of CdS_1-xSe_x (0 less than or equal to x less than or equal to 0.4) films is observed at (lambda)₁=0.495 divided by 0.545 micrometers versus the film composition. Subsequent to HT, the photoconductivity spectrum considerably widens and appears the impurity maximums at (lambda)₂=0.58 divided by 0.69 micrometers and (lambda)₃=0.95 divided by 1.05 micrometers. At (lambda)=0.88 divided by 1.56 micrometers wavelength region, the primary photocurrent optical quenching (POQ) of the films takes place. The POQ spectrum in photosensitive CdS_1-xSe_x films consists band with the maximum at (lambda)_max-1.28 divided by 1.38 micrometers, versus the film composition and HT conditions. At optimum conditions, the degree of quenching attains to 12%. The quenching of the primary photoconductivity by infrared light, leads to the occupation of the r-centers by holes.

The Cd_1-xZn_xSe films, deposited from solution, differ by high photosensitivity in visible and near IR region of spectrum. In present paper are called the results of induced impurity photoconductivity (IIP) of Ccd_1-xAN_xSe (0 less than or equal to x less than or equal to 0.5) films in region of 2.5-3.0micrometers . The Cd_1-xZn_xSe films are obtained on glass-ceramic substrates by chemical deposition from aqueous solution, containing cadmium and zinc salts, and thiourea. The films are subjected to heat-treatment in air at temperatures 400-500 degree(s)C for 0-30 min. A quasi-linear spectrum of IIR adjoins to band according to impurity band from the side of high energy. At the spectrum of IIP have been observed narrow bands, the half-wide is 0.03-0.04 eV. With increasing the levels of primary photoexcitation the deformation of IIP spectrum to region of high energy, which appears in bands spectrum maximum. The value of violet shear is equal to (Delta) E=0.05 eV. The values of these phenomena are determined by nature of multi- levels associate, which are related to the optical activated sticking centers of electrons. At the same time the intensity of wide IIP band (hv_o=0.3eV, in a low- temperature region) weak dependancies on temperature, on which testily band-impurity character of ionization of according ionizated donor centers. The isolated donors characterized by level of E_c=0.29-0.32 eV and cross- section of capture (S_n=(2-4)x10¹⁷ m²). Their participation in called associated provides appearance of systems of optical active electron states, entered in energy range of 0.3-0.6 eV, having conditioned by high-temperature stable photosensitivity of Cd_1-xZn_xSe films in IR-region. It is shown that, the studied Cd_1-xZn_xSe films could be in use as an ordinary and cheap elements of memory of optical records, transformers of visible light to infra-red (IR) radiation.

The paper is devoted to development and investigation of radiation resistance of photodiodes on the basis of layered compounds GaSe, InSe, GaTe intended for visible and near IR- region of a spectrum. A development of physical bases of a design and technology of manufacturing of photodiodes on the base of gallium selenide, indium selenide and gallium telluride is described in detail. The investigated photodiodes had photosensitivity in the 0.45-1.1 micrometers range of a spectrum with maxima (lambda) _GaSe=0,63 micrometers , (lambda) _InSe=0,95 micrometers and (lambda) _GaTe=0,85 micrometers at room temperature and also had comparatively high photoelectric parameters. Before, after and during an irradiation with low energy electrons with 6 MeV energy (fluence 10¹² divided by 10¹⁶ cm²) and gamma-quanta (fluence 10⁵ divided by 10⁸ R), high-energy electrons with 25 MeV energy (influence 10¹² divided by 10¹⁴ cm²), neutrons (10^{11 divided by 10(superscript 14} cm²) current-voltage and spectral characteristics of photodiodes on the base of gallium selenide, indium selenide and gallium telluride were measured. It is shown that the change of photosensitivity of photodiodes under the influence of ionizing radiation is connected with change in lifetime of major charge carriers. The radiation resistance of the investigated photodiodes is checked and an opportunity of their use under the condition of high radiation level is revealed.

The longitudinal photo detectors are widely used in different devices of optoelectronics as the detectors of azimuth shift of the light source, semiconductive layers of the IR-image converters and other position-sensitive devices. The longitudinal type photodetectors considered in the present work are prepared on a base of CdSe thin layers obtained by the chemical deposition from aqueous solutions. At the first electrode, the In₂O₃ layer was preliminarily deposited onto glass substrates. For activation of samples, a thermal deposition of copper followed by annealing in vacuum was used at temperatures of 350-450 degree(s)C for 5-30 min. Investigation of dark and light conductivity, the spectrum and kinetics of photoconductivity of CdSe films have been carried out. The studies of the current-voltage characteristics of In₂O₃- CdSe have been performed based on the generalized approximate theory of injection contact phenomena in semiconductors. The volume (n_o) and precontact (n_c) change carrier concentration, recombination (N_rec) trapping (N_cn) center concentration, the absorption edge and the transmission coefficient, the region and minority carriers have been determined. The dark I-U characteristic is sublinear, while the light I- U characteristic is superlinear that causes the increase of multiplicity coefficient, K, at elevated voltages. The absorption spectrum and the PC spectrum of the CdSe annealed samples and also of Cu-doped samples. CdSe:Cu have been investigated. The existence of uniform surface and the phase transition play an essential role in the formation of optical spectra. The absorption edge for the annealed samples corresponds to cubic modification and in the transmission range a wide diffuse band imposed on the fundamental edge of a single crystalline CdSe is observed. The CdSe films obtained by chemical deposition method are characterized by high reproducibility, sensitivity in the wavelength region of (lambda) =(0.54-0.6)micrometers , electric strength (10⁶ V/cm), high-resistivity ((rho) approximately 10⁹-10¹⁰ Ohm. Cm). Optical transmission (more than 60%).

In this article there were examined some items of the influence of IIT photocathode, resolution on low light level and signal-to-noise ratio on the quality of image the operator observes and some ways of the threshold characteristics rising.

The principle of construction of the multi-channel IR-CCD on the basis of vary-gap semiconductor have been considered. On an example of HgTe-CdTe solid solutions is shown, that grown epitaxial layers repeats of substrate form at using semiconductor substrate of special construction. By the subsequent treatment of the surface of obtained structure, it can be reached that the forbidden band energy in the plane of structure for each channel of device was constant (E_g=const), but is different for these channels due to gradient of E_g on thickness of epitaxial layer, which the range of spectral sensitivity of CCD channels are defined. Some peculiarities of technology for manufacturing such structures have been represented, also.

The current of electron flux, impinging phosphor screen of the MCP-image intensifier tube with profimily focusing, is produced by amplified flux of electron image, that corresponds radiation flux strike to the photocathode. Screen luminance is proportional to this current. However, in real tube, phosphor screen is subjected to bombardment of electron fluxes that initiated main, and degrading image quality. In result of analytical research is presented mathematic model of summarized electron current, produced by both main and collateral physical processes. This model estimates a part of all physical processes to summarized current. From this model be conclude of about necessary of collateral physical processes suppression to enhance image quality on tube screen. Decreased and suppression collateral physical processes influence may be reached due design elements optimization and high level of technological operation.

Results of many-years investigations of spectral-indices variations of optical radiation extinction in the lower troposphere in the relationship with the variation of diurnal and seasonal meteoconditions typical for a circular regime of air masses in the North hemisphere are analyzed and generalized.

In the report the sold principle of an operation of a gear of night vision of an active type (with impulse illumination), having a property staining of relief objects in a target image is offered technically. The separate information processing about contrast and volumetric performances of mapped objects of observation is supposed. The shaping of a target image happens for one impulse illumination, the application of scanning is not required.

The infrared dual magnification telescope for 8 to 12 micron wavelength region is designed. The optical system consists of five lenses and has a high transmittance. The switching of magnifications implements with movement of one of lens along an optical axis. The diffraction optical element is used for chromatic correction. Thermal correction is made with movement of two lenses with the help of two electromechanical drivers.

A new, inter-discipline area of scientific research known as Femtosecond Photoelectronics combines investigations on femtosecond lasers, physics of photoemission, classic and NEA-photocathodes, electron optics and computer modeling, vacuum technology, gas mass-spectrometry, image data readout and acquisition, scientific instrumentation. The main goal of these researches is to create diagnostic techniques and tools for direct recording 1D and 2D images of high-speed events occurring within X-ray to IR spectral range, with femtosecond time resolution and with sensitivity capable to detect tens of photons in each spatial resolved element. The most interesting results in tubes/cameras/diffractometers designing and their applications in experimental physics will be presented.

Noise and high-frequency characteristics of photosensitive avalanche MIS-type structures are studied. It is shown that their high-speed operation is substantially higher than that of silicon avalanche photodiodes. A theoretical analysis of high-frequency properties of avalanche photodiodes is carried out and the analytical expressions for the gain- bandwidth production are obtained. It is shown that this production is not a universal parameter for the MIS structure with a negative feedback, since for high amplification factors, the effective value of the relationship of the impact ionization coefficients by various types of charge carriers in such structures turns out to be essentially different than in avalanche photodiodes.

The paper suggests a novel concept of dark conduction blocking in semiconductors with one type conduction comprising a series of (p⁺⁺-p -p⁺ - p⁺⁺) junction of the type. Blocking is caused by the existence of a potential barrier in the region of the P⁺ -p junction. The barrier is positioned in crystal at a depth of 10-15 micrometers from one of the contacts. As a consequence, the external electric shielded field is blocked by the space-charge region of the junction resulting in the absence of charge transport through the valence band when the structure is not illuminated. IR-photodetectors ((lambda) approximately 1-6,5 micrometers ) fabricated on p-type single crystal silicon are characterized by photoresposivity S_(lambda approximately 10-0,1 A/W and dark current density <5.10^-9 A/cm² at T approximately 80 K.

Pb_1-x-yGe_xSn_yTe:In thin films were made using hot wall modified method is used for making of. The composition of grown films approximately corresponds to the initial composition of the polycrystalline charge when using this method. Maximum observed concentration deviation (in comparison to charge) of different components in resulting films was: (Delta) n_Pb less than or equal to 6%, (Delta)n_Ge less than or equal to 23%, (Delta)n_Sn less than or equal to 11%. Crystalline perfection of films depends on a substrate type but their composition does not depend on it. Unlike BaF2 substrates, films grown on Si + SiO₂ substrates were polycrystalline. Alternating current measurements (responsivity and current dependence on modulation frequency) showed that behavior of polycrytalline films was the same as of monocrystalline films (on BaF₂). However direct current measurements (current-voltage and temperature dependence of resistance) showed results, that differ from those for monocrystalline films. The model, based on assumption about existence of traps at the polycrystal grain boundaries was proposed to explain obtained results. Concentration of electrons, captured on these traps was seemingly dependent on the background flux. This model was used to explain difference between monocrystalline and polycrystalline Pb_1-x-yGe_xSb_yTe:In thin films.

The results of theoretical analysis of influence of the photo-induced space charge upon the photo-carrier initiation, the Dember's effect (photo-EMF) and the photocurrent amplification in the case of inter-band absorption of weak optical radiation and non-equilibrium carrier recombination via deep impurity are presented. The model of a single recombination deep acceptor level and shallow donor impurity is considered. The tasks (including the effect of the gigantic splash of semiconductor photoconductivity upon an increase in the concentration of recombination centers) are solved beyond the commonly used approximation of quasi-neutrality. It is shown that the solutions beyond the approximation of quasi-neutrality may be basically differed from the quasi-neutral solutions.

The optical absorption edge on the indium-doped (N_In less than or equal to 0,8 weight%) Pb_1-xSn_xSe(X=0.07) epitaxial layers have been investigated. The observed movement of intrinsic absorption edge in the short-wave length region spectrum is interpreted by the presence of indium impurity, which lead to some increasing of the gap width E_g in Pb_1-xSn_xSe. It has been found, that the inter-zone absorption edge in the weak absorption region Pb_1-xSn_xSe(In) is conditioned by nondirect optic transitions. The magnitudes of E_g and E_g/dT have been calculated and are described by (square root)K=f(E) curve.

Two methods of determining the deep defect concentration are proposed from dependencies of photoconductance on illumination intensity and of carrier lifetime on injection- level. The methods are based on saturation of excess majority carrier density with increasing the illumination intensity and on abrupt decrease of majority carrier lifetime with increasing their excess concentration, which takes place as a result of filling of the defect level by minority carriers. In distinct form the well known injection-level spectroscopy, both of the methods allow to determine the defect density without knowing any of the defect parameters, like energy level, recombination coefficient of electrons and holes. These methods are applied to boron-doped single-crystalline silicon with radiation-induced deep defects of type phosphorous-vacancy, oxygen-vacancy and carbon-oxygen complexes. It is shown that these methods can be applied to semiconductors with deep defects which cause significant difference between the values of excess concentrations and lifetimes of electrons and holes.

The epitaxy of Cd_xHg_1-xTe (X=0.21-0.29) on Cd_0.96An_0.04Te (111)B substrates has been performed from Te-base melts at 515-495 degree(s)C. The surface morphology and the homogeneity of the composition ((open square)x) and the thickness ((open square)d) of the epitaxial layers over their area have been studied as a function of growth conditions. The hydrodynamic processes that occur in the liquid phase during the epitaxy have been analyzed using numeric methods based on solving a set of two-dimensional transient-state equations of convective diffusion in the Bussinesk approximation. The calculation results are in a good agreement with the experimental data. The wave relief on the epitaxial layer surfaces has been found to originate mainly from the convective mass transport conditions in the liquid phase at an early stage of the epitaxy when the crystallization front forms. Epitaxial layers with diameters of up to 30 mm, (open square)d approximately 1 mm and (open square)x approximately 0.003 have been grown. After heat treatment in Hg vapors at 340-360 degree(s)C the layers have the p type of conductivity with the hole concentration p=(0.5-2.0)x10¹⁶cm^-3 and the hole mobility (open square) greater than or equal to 500cm²/V(center dot)s

The molecular beam epitaxy (MBE) set-up with analytical control equipment of growth process was designed and fabricated for growing A²B⁶ compounds including the mercury-containing ones. A technology was elaborated for growing mercury-cadmium-telluride (MCT) solid solution heteroepitaxial structures (HS) by molecular beam epitaxy (MBE) method with a given variation of MCT composition throughout the thickness. HS's MCT MBE on CdZnTe/GaAs substrate with different variation composition in layers at MCT film interfaces were designing and growing. These structures were used for manufacture of high quality single, linear and array photoconductors (PC) and photodiodes (PD) operating at 77K and 200-250K temperature wavelength range of 3-5 micrometers and 8-12$ mum, up and over 20micrometers . Widegap layers at MCT film interfaces are used as passivating coating. Narrowgap layer at MCT film/CdZnTe buffer layers interface is used for decrease of PD series resistance. For decrease of dark currents of photodiodes array operating at 200 K HS MCT MBE were used with special composition distribution of composition throughout the thickness.

Mercury Cadmium Telluride (MCT) alloy system attract attention of leading firms in many countries. On the base of MCT have been developed photoconductive and photovoltaic detectors, LWIR and MWIR focal plane arrays (FPA) of various type. More than two thirds of all IR photoelectronics systems use photodetectors on the basis of MCT. In this paper some aspects of the history of MCT development in former USSR during the last 40 years are discussed.

In the present paper, we report the results of our investigation, which aims to upgrade the GaInAsSb-based photodiode heterostructure technology. The main requirements on GaInAsSb solid solutions from the viewpoint of near-infrared photodiode applications are considered. Such methods for decreasing a carrier concentration in the epitaxial layers of the solid solutions as doping with a donor impurity, the use of rare-earth element Yb, growth from lead containing melt are discussed. The possibility of decreasing the GaInAsSb band gap resulting in long- wavelength photosensitivity threshold shift is demonstrated. We have made GaInAsSb/GaAlAsSb photodiodes with the long- wavelength photosensitivity threshold of 2.4 micrometers . At -2V reverse bias a lowest dark current density is 3x10^-3 A/cm², and the quantum efficiency is 60-70% at (lambda)=2.0-2.1micrometers .

General trends and different technological approaches to modern optoelectronic integrated circuits (OEICs) development and fabrication are considered. It is emphasized that from point of view multifunctional OEICs realization direct gap semiconductor materials both A³B⁵ and A²B⁶ are primarily desirable. Data are presented for optical, luminescent and photoelectric properties of several A²B⁶ compounds, including CdS, CdSe, CdSSe, CdTe. Material aspects are discussed imposing technological limitations for A²B⁶ compounds utilization in OEICs development and fabrication.

In the work are studied structural, electrical and optical properties of film heterojunctions p-Pb_1-xSn_xTe-n- PbTe obtained by condensation of molecular beams in vacuum approximately 10^-6mm mercury pressure. It is determined that diffusion fringes intensity on diffraction patterns are different depending on thickness of films (d) and temperature of films growing (T_f). The intensity of diffusion fringes also depends on survey temperature (T_s). The correlation between intensity of diffusion fringes on electron diffraction patterns and photosensitivity of heterojunctions Pb_1-xSn_xTe-PbTe is found.

The features of growth epitaxial films PbSe_1-xTe_x (x=0,2) on substrates BaF₂ by the epitaxy of molecular beam method are investigated. The optimum meanings of speed of condensation are certain and the temperatures of a substrate at which turn out of a film with perfect structure. The complex research of features of growth films in correlation with their physical properties is carried out. The structure films was supervised electronographic, X-ray diffractometric and electron-microscope by methods. It is established, that epitaxial films PbSe_1-xTe_x on BaF₂ (111) substrates grow by plane (111). It revealed, that epitaxial films brought up at temperatures of substrate 673K have monocrystal structure with half-width X- ray diffraction swing W_1/2=80 divided by 100 and smooth surface without secondary inclusions.

Different aspects of research and development of UV- sensitive photodetectors, based both on different inorganic and organic media including single crystalline, polycrystalline and polymer structures. Data are presented for photodetectors with enhance UV-sensitivity based on Si, silicon-on-sapphire (SOS), InGaAsP, GaAlP alloys GaN and polymer structures. It has been found that despite different character of band structure (both direct and indirect) and different value of band gap energy in all these cases (UV-sensitive photodetectors can be made. It has been shown that by design parameters optimization and band gap engineering it is possible to vary photodetectors characteristics in wide range. Two alternative technological approaches have been analyzed for visible- blind UV-photodetectors fabrication. The first approach utilizes photodetectors with enhanced UV-sensitive based on traditional semiconductor materials and built-in UV-filter for damping of visible sensitivity component. Alternative approach eliminating the built-in UV-filter is based on utilization of new wide-gap materials (gallium nitride and polymer structures).

On the base of analysis of radiative characteristics of objects and backgrounds, main requirements to photodetectors of new generation for spaceborne, air-borne and ground-based optical-electronic complexes meant for sounding and monitoring of the Earth surface, atmosphere and outer space were formulated. Taking into account complicated tasks of weak radiative sources detection we propose to widen works on development of looking matrices and matrices functioning in the regime of temporal delay and accumulation (TDA) of large formats.

The utmost parameters of ideal thermal imagers are analyzed at observation of conventionally point emitters, (emitters which angular sizes do not exceed a field of view angle of a separate photosensitive element of a thermal imager -PSE). The carrying out of such analysis has required: the account of a background radiation, an application of a mode model for calculation of radiative fields, in which the decomposition of radiation flows from a point source and background into spectral-spatial modes, an account of a lens diffraction and aberrations. The fundamental restrictions of responsivity and information capacity stipulated by a shot photon noise, irradiation PSE, were considered only. The mathematical models for calculations of a utmost sensitivity, dynamic range, thermal contrast and other utmost performances of an ideal thermal imager were designed.

The calculations of noise equivalent temperature difference (NETD) for thermovision devices are carried out, with cut- off wavelengths of photo detectors ((lambda) _co) and distance to target used as parameters. For the estimation of influence of the photodiode spectral characteristics on the parameters of thermovision systems several characteristics were taken into account: the spectrum of radiation of object, transmission of an atmosphere and spectral characteristic of sensitivity of photo-diode array. The results show that an increase of (lambda) _co above 10.5 microns at small distances improves the temperature resolution in degradation of temperature resolution (increase NETD).

The progress of semiconductor tunable lasers allows to put the question about development of new navigation systems. For the successful solution of this problem the tunable injection lasers for red spectral region were explored and the laboratory metrology installation is designed with the high spectral resolution for measuring a laser radiation absorption in the region of wavelengths 760 nm, corresponding to rotationally oscillatory transitions in a molecule of oxygen.

The various optical measuring methods for deriving information about the size and form of objects are now used in difference branches- mechanical engineering, medicine, art, criminalistics. Measuring by means of the digital television systems is one of these methods. The development of this direction is promoted by occurrence on the market of various types and costs small-sized television cameras and frame grabbers. There are many television measuring systems using the expensive cameras, but accuracy performances of low cost cameras are also interested for the system developers. For this reason inexpensive mountingless camera SK1004CP (format 1/3', cost up to 40$) and frame grabber Aver2000 were used in experiments.

The results of the development of technology production of spatial light modulators (SLM) on the base of metal- dielectric-semiconductor-liquid crystal structures (MDS-LC) with single crystal GaAs and nematic liquid crystals are considered. The information about the principal technology operations that make SLM suitable to television standards is presented.

The method of IR spectroscopy was used to examine optical features of thin (2.0-2.2micrometers ) poly -N- fenilparaocsifenilpiromellitymide films with one- and two- sided titanium metallization as absorption, reflection and transmission. Polyimide films having thick titanium coat on the one-side and thin coat on the other side show twofold higher absorption in comparison with the absorption capacity of the films with one-sided metallization. Higher level of absorption of IR light by the two-sided metallized films in the 860-1420cm^-1 range with maximum up to 76% in the 900-1060cm^-1 range can be explained by the waves interference at the structure.

Modeling of thermal fields in multilayer photodetector structures by finite element method are discussed. The developed technique is illustrated with thermal field calculation in hybrid multilayer photosensitive semiconductor structures on the base of compound CdHgTe semiconductors.

The plasmaoptical system of ion extraction allowed to form the ion beams, where the current is independent from extraction voltage, is analyzed. The temperature of discharge electrons ensured the equipotentiality of the magnetic field lines determines the minimal energy of beam. The offered source of tape beam will be used for those purposes, which require the large currents of ions with low energy.

Surface conductivity of the thermoelements on a basis of the extruded samples of Bi_0.5Sb_1.5Te₃ and Bi₂Te_2.7Se_0.3 solid solutions and influence of the distorted surface layer, arising at manufacturing thermoelements on their bulk thermoelectric properties have been investigated over 77-470 K temperature range. It is found that thermoelectrical efficiency of thermoelements after treatment of a surface increases by 10-20%. The obtained results are explained by creating of the distorted layer of approximately 20 micrometers thickness on a surface of thermoelements in the course of their manufacturing.

The effect of grain size of a starting powder and heat treatment on thermoelectric efficiency (Z) of extruded samples of Bi_0.5Sb_1.5Te₃ and Bi₂Te_2.7Se_0.3 solid solutions in temperature range from 77 up to 350 K. It is clarified, that in case of Bi_0.5Sb_1.5Te₃ solid solution maximal Z is observed in samples with of grains 630 microns and passed heat treatment in vacuum at 690K within 5 hours. In a case of Bi₂Te_2.7Se_0.3 solid solutions in samples with dimension of grains 630 microns, non-passed heat treatment. It is shown, that the obtained results are satisfactorily explained by effect of texture and structural imperfection son density and mobility of charge carriers, and also on the scattering mechanism of photons in extruded samples of the investigated solid solutions.

High effective and sufficiently firm materials on the basis of the Bi(subscript 85)Sb(subscript 15) solid solution doped by Pb impurities have been obtained and investigated. It is shown, that with growth of a doping degree values of thermoelectrical figure of merit (Z) at first grown up to 0,005 at %Pb of and at this concentration reaches value equal approximately 5,0x10(superscript -3)K(superscript -1 at approximately 200K, and then decreases. In a magnetic field the greatest values of Z for the samples of p-type has one doped by 0,05 at of %Pb, and Z reaches value approximately 0,84x10(superscript -3) K(superscript -1) at approximately 80K.