Photomask blanks quality and functionality improvement challenges for the 130-nm node and beyond

Hideo Kobayashi; Masao Ushida; Kunihiko Ueno

doi:10.1117/12.425091

9 April 2001 Photomask blanks quality and functionality improvement challenges for the 130-nm node and beyond

Hideo Kobayashi, Masao Ushida, Kunihiko Ueno

Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425091
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany

Abstract

Lithography will use various types of resolution enhancement technique on reticles such as EAPSM and OPC to extend refractive reduction optics to the 130 nm node and below. And there are mountainous difficulties that confront mask- makers as well as photomask blanks manufacturers now. In this paper, photomask blanks development status is introduced, and issues to be solved for the future are discussed.

Citation Download Citation

Hideo Kobayashi, Masao Ushida, and Kunihiko Ueno "Photomask blanks quality and functionality improvement challenges for the 130-nm node and beyond", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); https://doi.org/10.1117/12.425091

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