Investigation of OPC mask distortion effect

Zheng Cui; Jinglei Du

doi:10.1117/12.425225

26 April 2001 Investigation of OPC mask distortion effect

Zheng Cui, Jinglei Du

Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425225
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

Distortion effect in optical proximity corrected (OPC) masks on wafer level image has been investigated using combined simulation of photomask patterning process and projection optical lithography. Unlike the previous simulation of optical proximity effect, which were based on ideal mask design, the simulation presented in this paper is based on distorted mask features. The mask feature distortion comes from simulation of electron beam lithography or laser scanning lithography. Proximity effects in e-beam lithography or laser direct write has been taken into account for the generation of mask features. The simulation has demonstrated that the OPC compensation features are significantly distorted at mask level. Such distortions have noticeable impact on the wafer level resist images.

Citation Download Citation

Zheng Cui and Jinglei Du "Investigation of OPC mask distortion effect", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425225

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