Etching rate control of mask material for XeF2 etching using UV exposure

Koji Sugano; Osamu Tabata

doi:10.1117/12.442931

28 September 2001 Etching rate control of mask material for XeF₂ etching using UV exposure

Koji Sugano, Osamu Tabata

Proceedings Volume 4557, Micromachining and Microfabrication Process Technology VII; (2001) https://doi.org/10.1117/12.442931
Event: Micromachining and Microfabrication, 2001, San Francisco, CA, United States

Abstract

A new technique to control etching rates of mask materials during XeF₂ etching was proposed. By exposing Si sample with SiO₂ and Si₃N₄ as mask materials to UV light of 3 W/cm² during XeF₂ etching, the etching rates of SiO₂ and Si₃N₄ were dramatically increased from 2.52 angstrom/pulse to 42.0 angstrom/pulse and from 27.3 angstrom/pulse to 403 angstrom/pulse, respectively. This new technique allows us to remove the mask material selectively and change the mask pattern by UV light exposure during in- situ etching process without additional photolithography step and opens a new silicon micromachining process for 3- dimensional fabrication. The multi-step Si structure was successfully realized by this technique.

Citation Download Citation

Koji Sugano and Osamu Tabata "Etching rate control of mask material for XeF₂ etching using UV exposure", Proc. SPIE 4557, Micromachining and Microfabrication Process Technology VII, (28 September 2001); https://doi.org/10.1117/12.442931

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