III-N multiple quantum wells based 285- to 340-nm deep-ultraviolet light-emitting diodes over sapphire

Mohamed Asif Khan

doi:10.1117/12.479775

3 July 2003 III-N multiple quantum wells based 285- to 340-nm deep-ultraviolet light-emitting diodes over sapphire

Mohamed Asif Khan

Proceedings Volume 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII; (2003) https://doi.org/10.1117/12.479775
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

High power deep ultraviolet (UV) light emitting diodes (LEDs) are good candidates for solid-state lighting, bio-chemical detection and short-range communications. In this paper we describe the progress from our and other research groups towards fabricating 340-280 nm LEDs. In past we have reported on deep UV LEDs on sapphire substrates with active region comprised of pulsed atomic layer epitaxy (PALE) deposited quaternary AlInGaN and ternary AlGaN multiple quantum wells (MQWs). These studies indicated a key role played by current crowding (thermal effects), active region design (polarization effects) and the base material quality (active region defects originating from buffer AlGaN layers) in controlling the emitted powers. Now using a unique AlGaN/AlN superlattice to control strain we have deposited Si-doped high Al-content n⁺-AlGaN layers over sapphire with thickness in excess of 2 μm. These layers and a new active layer design have yielded high power deep UV LEDs with emission wavelength from 280-340 nm. For 325 nm emission devices powers as high as 10 mW for 1 A pulsed pump current and 1 mW for 100 mA dc pump current were measured. For 280 nm emissions a power of 0.47 mW for 260 mA dc and 3 mW for 1 A of pulsed pump current was measured. For III-N deep UV LEDs, these values to date represent devices with the highest powers for the shortest wavelengths. In this paper we present the details of material and device fabrication and characterization. Initial data on device life-tests are also presented.

Citation Download Citation

Mohamed Asif Khan "III-N multiple quantum wells based 285- to 340-nm deep-ultraviolet light-emitting diodes over sapphire", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); https://doi.org/10.1117/12.479775

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available