Paper
28 August 2003 Impact of OPC aggressiveness on mask maufacturability
Author Affiliations +
Abstract
In recent low-k1 lithography, OPC is required to generate more aggressively fragmented patterns to keep its pattern fidelity on the LSI devices. But over-aggressive OPC might induce a crisis of mask manufacturability. In this paper, using newly defined parameter, DPF (Degree of Pattern Fidelity), quantitative relations between OPC aggressiveness and pattern fidelity are evaluated under several conditions. Next, the concept of MEF is extended for 2D complex patterns using DPF, and is evaluated as a function of OPC aggressiveness. Other mask manufacturability, such as writing time, data volume, and inspection availability would be evaluated as a function of OPC aggressiveness.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satoshi Tanaka, Soichi Inoue, Toshiya Kotani, Kyoko Izuha, and Ichiro Mori "Impact of OPC aggressiveness on mask maufacturability", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504253
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Optical proximity correction

Photomasks

Manufacturing

Inspection

Semiconducting wafers

Vestigial sideband modulation

Lithography

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