Reticle SEM specifications required for lithography simulation

Mitsuyo Kariya; Eiji Yamanaka; Satoshi Tanaka; Takahiro Ikeda; Shinji Yamaguchi; Masamitsu Itoh; Hideaki Kobayashi; Tsukasa Kawashima; Shogo Narukawa

doi:10.1117/12.617130

28 June 2005 Reticle SEM specifications required for lithography simulation

Mitsuyo Kariya, Eiji Yamanaka, Satoshi Tanaka, Takahiro Ikeda, Shinji Yamaguchi, Masamitsu Itoh, Hideaki Kobayashi, Tsukasa Kawashima, Shogo Narukawa

Author Affiliations +

Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617130
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan

Abstract

We investigated the specifications of scanning electron microscope required for the lithography simulation based on the edge data extracted from an actual reticle pattern in the assurance of reticle pattern in which two-dimensional optical proximity correction is applied. Impacts of field of view, positioning error and image distortion on a lithography simulation were studied experimentally. For the reticle pattern assurance in hp90, the field of view of larger than 16 μm squares, the positioning error within +/- 1 μm and the magnification error of less than 0.3% are needed. Under these conditions, wafer image can be predicted with sufficient accuracy by the simulation.

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Mitsuyo Kariya, Eiji Yamanaka, Satoshi Tanaka, Takahiro Ikeda, Shinji Yamaguchi, Masamitsu Itoh, Hideaki Kobayashi, Tsukasa Kawashima, and Shogo Narukawa "Reticle SEM specifications required for lithography simulation", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617130

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