Paper
21 June 2006 Mask data volume: historical perspective and future requirements
Author Affiliations +
Proceedings Volume 6281, 22nd European Mask and Lithography Conference; 62810H (2006) https://doi.org/10.1117/12.692639
Event: 22nd European Mask and Lithography Conference, 2006, Dresden, Germany
Abstract
Mask data file sizes are increasing as we move from technology generation to generation. The historical 30% linear shrink every 2-3 years that has been called Moore's Law, has driven a doubling of the transistor budget and hence feature count. The transition from steppers to step-and-scan tools has increased the area of the mask that needs to be patterned. At the 130nm node and below, Optical Proximity Correction (OPC) has become prevalent, and the edge fragmentation required to implement OPC leads to an increase in the number of polygons required to define the layout. Furthermore, Resolution Enhancement Techniques (RETs) such as Sub-Resolution Assist Features (SRAFs) or tri-tone Phase Shift Masks (PSM) require additional features to be defined on the mask which do not resolve on the wafer, further increasing masks volumes. In this paper we review historical data on mask file sizes for microprocessor, DRAM and Flash memory designs. We consider the consequences of this increase in file size on Mask Data Prep (MDP) activities, both within the Integrated Device Manufacturer (IDM) and Mask Shop, namely: computer resources, storage and networks (for file transfer). The impact of larger file sizes on mask writing times is also reviewed. Finally we consider, based on the trends that have been observed over the last 5 technology nodes, what will be required to maintain reasonable MDP and mask manufacturing cycle times.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris Spence, Scott Goad, Peter Buck, Richard Gladhill, Russell Cinque, Jürgen Preuninger, Üwe Griesinger, and Martin Blöcker "Mask data volume: historical perspective and future requirements", Proc. SPIE 6281, 22nd European Mask and Lithography Conference, 62810H (21 June 2006); https://doi.org/10.1117/12.692639
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CITATIONS
Cited by 13 scholarly publications and 2 patents.
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KEYWORDS
Optical proximity correction

Photomasks

Vestigial sideband modulation

Logic

SRAF

Reticles

Manufacturing

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