A study for effect of rounded contact hole pattern by laser mask writing machine onto wafer process margin

Se-Jin Park; Kyung-Hee Yoon; Jae-Hyun Kang; Jae-Young Choi; Yong-Suk Lee; Keeho Kim

doi:10.1117/12.681745

20 May 2006 A study for effect of rounded contact hole pattern by laser mask writing machine onto wafer process margin

Se-Jin Park, Kyung-Hee Yoon, Jae-Hyun Kang, Jae-Young Choi, Yong-Suk Lee, Keeho Kim

Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62831K (2006) https://doi.org/10.1117/12.681745
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan

Abstract

The higher productivity of the DUV laser mask lithography system compared to the 50-KeV e-beam system offers the benefit of mask cost down at low k1 lithographic process. But the major disadvantage of the laser mask writing system is rounding effect of contact hole and line end. In this paper, we study wafer process margin effect of corner rounded contact hole and present mask CD specification of corner rounded contact hole written by DUV laser lithography system compared to 50KeV writing tool. The contact hole rounding changes contact hole area at the same mask CD and also change MEEF(Mask Error Enhancement Factor) even though the contact hole area is compensated by adjusting mask bias. If one change EBM3500 mask writer machine to Alta4300 mask writer machine for 160nm contact hole using KrF and 6% HT-PSM, one has to change mask bias, 3.2nm, to meet same wafer process condition.. The MEEF of ALTA4300 mask is 1.6% higher than that of EBM3500 mask at same effective target mask CD. And the mask CD specification written by ALTA4300 has to be set more tightly about 1.3 ~ 1.5% to meet same wafer process margin with EBM3500 mask.

Citation Download Citation

Se-Jin Park, Kyung-Hee Yoon, Jae-Hyun Kang, Jae-Young Choi, Yong-Suk Lee, and Keeho Kim "A study for effect of rounded contact hole pattern by laser mask writing machine onto wafer process margin", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831K (20 May 2006); https://doi.org/10.1117/12.681745

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