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We present finite-element calculations of the electrostatics of NWFETs and numerical simulations of band
bending, charge distributions, and dopant ion diffusion in NWs. For NWFETs, we find that the
semiconducting nature and finite length of the NW warrant sizeable corrections to capacitance calculations
using the standard analytical formula and simulations that assume a metallic NW. We thus provide a
comprehensive set of correction factors to these approximations. We also present a possible mechanism for
explaining non-uniform dopant distributions involving electrodiffusion of charged dopant ions at high
temperatures. We find that changes in the internal NW electrostatics due to non-uniform dopant
distributions can have significant effects on the free carrier concentration and therefore conductivity of
semiconductor NWs.
Devesh R. Khanal andJunqiao Wu
"Numerical studies of semiconductor nanowire electrostatics", Proc. SPIE 6768, Nanomaterials Synthesis, Interfacing, and Integrating in Devices, Circuits, and Systems II, 67680D (10 October 2007); https://doi.org/10.1117/12.732228
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Devesh R. Khanal, Junqiao Wu, "Numerical studies of semiconductor nanowire electrostatics," Proc. SPIE 6768, Nanomaterials Synthesis, Interfacing, and Integrating in Devices, Circuits, and Systems II, 67680D (10 October 2007); https://doi.org/10.1117/12.732228