Fabrication of InGaN quantum dots by periodically interrupted growth in MOCVD

Seung-Kyu Choi; Jae-Min Jang; Sung-Hak Yi; Jung-A Kim; Woo-Gwang Jung

doi:10.1117/12.757420

4 January 2008 Fabrication of InGaN quantum dots by periodically interrupted growth in MOCVD

Seung-Kyu Choi, Jae-Min Jang, Sung-Hak Yi, Jung-A Kim, Woo-Gwang Jung

Proceedings Volume 6831, Nanophotonics, Nanostructure, and Nanometrology II; 683119 (2008) https://doi.org/10.1117/12.757420
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Self-assembled InGaN quantum dots are fabricated in a two-flow horizontal MOCVD reactor maintained at the pressure of 200 torr. The precursors were trimethyl-gallium (TMG) and trimethyl-indium (TMI) and ammonia (NH₃), and the carrier gas was N₂ and H₂. The optimum condition for periodically interrupted growth (PIG) mode was deduced to fabricate the InGaN quantum dots. NH₃ was supplied in PIG mode with the interval of 3 seconds and 5 seconds while TMG and TMI were supplied continuously. The carrier gas was N₂ in QDs growth, while H₂ in nucleation and buffer layer growth. The influence of number of periodic interrupted NH₃ on the structural and optical properties of InGaN quantum dots was investigated by AFM, FE-SEM and low temperature photoluminescence (LT-PL). The AFM images give the size of InGaN QDs with diameter of 20 ~ 50 nm, height of 3 ~ 10 nm and density of 10¹⁰ #/cm² ~ 10¹¹#/cm². A strong peak at 362.2 nm (3.41eV) and broad emission peak in 435 nm (2.86 eV) were evolved in the photoluminescence measurement using Nd-YAG laser. The composition of QDs was estimated to be In_0.14Ga_0.86N from the relation between peak energy and indium content. Hence. The periodic interruption growth enables the fabrication of self- assembled InGaN QDs with high density and uniform size.

Citation Download Citation

Seung-Kyu Choi, Jae-Min Jang, Sung-Hak Yi, Jung-A Kim, and Woo-Gwang Jung "Fabrication of InGaN quantum dots by periodically interrupted growth in MOCVD", Proc. SPIE 6831, Nanophotonics, Nanostructure, and Nanometrology II, 683119 (4 January 2008); https://doi.org/10.1117/12.757420

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available