Structural defects and degradation of high-power pure-blue GaN-based laser diodes

Shigetaka Tomiya; Osamu Goto; Masao Ikeda

doi:10.1117/12.767769

15 February 2008 Structural defects and degradation of high-power pure-blue GaN-based laser diodes

Shigetaka Tomiya, Osamu Goto, Masao Ikeda

Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 68940N (2008) https://doi.org/10.1117/12.767769
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

In order to elongate lifetime of high power pure-blue GaN based laser diodes, reduction of newly created structural defects at active region, which consists of multiple quantum well structures, is inevitable. We, first, report on detailed structural analysis of this new type defects and discuss formation mechanism and reduction methodology of these defects. We, then, fabricated laser diodes with current injection-free structure at front facets, which is confirmed to be effective for suppression of degradation by catastrophic optical damage. We also discuss degradation mechanism of the laser diodes.

Citation Download Citation

Shigetaka Tomiya, Osamu Goto, and Masao Ikeda "Structural defects and degradation of high-power pure-blue GaN-based laser diodes", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940N (15 February 2008); https://doi.org/10.1117/12.767769

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