Lattice location of the group V elements Sb, As, and P in ZnO

Ulrich Wahl; João Guilherme Correia; Tânia Mendonça; Stefan Decoster

doi:10.1117/12.846097

15 February 2010 Lattice location of the group V elements Sb, As, and P in ZnO

Ulrich Wahl, João Guilherme Correia, Tânia Mendonça, Stefan Decoster

Proceedings Volume 7603, Oxide-based Materials and Devices; 76030K (2010) https://doi.org/10.1117/12.846097
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Modifying the properties of ZnO by means of incorporating antimony, arsenic or phosphorus impurities is of interest since these group V elements have been reported in the literature among the few successful p-type dopants in this technologically promising II-VI compound. The lattice location of ion-implanted Sb, As, and P in ZnO single crystals was investigated by means of the electron emission channeling technique using the radioactive isotopes ¹²⁴Sb, ⁷³As and ³³P and it is found that they preferentially occupy substitutional Zn sites while the possible fractions on substitutional O sites are a few percent at maximum. The lattice site preference is understandable from the relatively large ionic size of the heavy mass group V elements. Unfortunately the presented results cannot finally settle the interesting issue whether substitutional Sb, As or P on oxygen sites or Sb_Zn-2V_Zn, As_Zn-2V_Zn or P_Zn-2V_Zn complexes (as suggested in the literature) are responsible for the acceptor action. However, the fact that the implanted group V ions prefer the substitutional Zn sites is clearly a strong argument in favour of the complex acceptor model, while it discourages the notion that Sb, As and P act as simple "chemical" acceptors in ZnO.

Citation Download Citation

Ulrich Wahl, João Guilherme Correia, Tânia Mendonça, and Stefan Decoster "Lattice location of the group V elements Sb, As, and P in ZnO", Proc. SPIE 7603, Oxide-based Materials and Devices, 76030K (15 February 2010); https://doi.org/10.1117/12.846097

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