Group IV nanomembranes and nanoepitaxy: new properties via local and global strain engineering

Francesca Cavallo; Deborah M. Paskiewicz; Shelley A. Scott; MingHuang Huang; Max G. Lagally

doi:10.1117/12.861592

17 September 2010 Group IV nanomembranes and nanoepitaxy: new properties via local and global strain engineering

Francesca Cavallo, Deborah M. Paskiewicz, Shelley A. Scott, MingHuang Huang, Max G. Lagally

Proceedings Volume 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II; 776806 (2010) https://doi.org/10.1117/12.861592
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

Semiconductor nanomembranes, single-crystal sheets as thin as ten nanometers, offer many opportunities for novel devices and new science. The most interesting involve epitaxy to introduce strain at both local and global levels. Coming into play are membrane thinness, access to both sides of a sheet, transferability, and enhanced compliancy. Advances in Group IV optoelectronics, thermoelectrics, and photonics may be achievable by combining epitaxy with Si and Ge nanomembranes. Nanoepitaxy allows formation of new strained materials, periodic strain lattices, and mix and match membranes with hybrid orientations or compositions.

Citation Download Citation

Francesca Cavallo, Deborah M. Paskiewicz, Shelley A. Scott, MingHuang Huang, and Max G. Lagally "Group IV nanomembranes and nanoepitaxy: new properties via local and global strain engineering", Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 776806 (17 September 2010); https://doi.org/10.1117/12.861592

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