Integrated mask and optics simulations for mask corner rounding effect in OPC modeling

Jing Xue; Zhijie Deng; Kyoil Koo; James Shiely; Sooryong Lee; Yunqiang Zhang; Yongfa Fan; Thomas Schmoeller

doi:10.1117/12.866197

29 September 2010 Integrated mask and optics simulations for mask corner rounding effect in OPC modeling

Jing Xue, Zhijie Deng, Kyoil Koo, James Shiely, Sooryong Lee, Yunqiang Zhang, Yongfa Fan, Thomas Schmoeller

Proceedings Volume 7823, Photomask Technology 2010; 782341 (2010) https://doi.org/10.1117/12.866197
Event: SPIE Photomask Technology, 2010, Monterey, California, United States

Abstract

This paper presents a novel mask corner rounding (MCR) modeling approach based on Synopsys' Integrated Mask and Optics (IMO) modeling framework. The point spread functions of single, double, and elliptical Gaussians are applied to the IMO mask kernels to simulate MCR effects. The simulation results on two dimensional patterns indicate that the aerial image intensity variation is proportional to the MCR induced effective area variations for single type corners. The relationship may be reversed when multiple types of corners exist, where the corners close to the maximum intensity region have a greater influence than others. The CD variations due to MCR can be estimated by the effective area variation ratio and the image slope around the threshold. The good fitting results on line-end patterns indicate that the ΔCD is the quadratic function of the Gaussian standard deviations. OPC modeling on 28nm-node contacts shows that MCR has significant impact on model fitting results and process window controls. By considering the real mask geometry effects and allowing in-line calibration of model parameters, the IMO simulation framework significantly improves the OPC model accuracy, and maintains the calibration speed at a good level.

Citation Download Citation

Jing Xue, Zhijie Deng, Kyoil Koo, James Shiely, Sooryong Lee, Yunqiang Zhang, Yongfa Fan, and Thomas Schmoeller "Integrated mask and optics simulations for mask corner rounding effect in OPC modeling", Proc. SPIE 7823, Photomask Technology 2010, 782341 (29 September 2010); https://doi.org/10.1117/12.866197

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