Paper
18 November 2013 Spectrum photoluminescence measuring system of porous silicon samples
T. F. Paes, A. F. Beloto, L. A. Berni, L. M. Silva
Author Affiliations +
Proceedings Volume 8785, 8th Iberoamerican Optics Meeting and 11th Latin American Meeting on Optics, Lasers, and Applications; 8785A9 (2013) https://doi.org/10.1117/12.2021695
Event: 8th Ibero American Optics Meeting/11th Latin American Meeting on Optics, Lasers, and Applications, 2013, Porto, Portugal
Abstract
The porous silicon is a material made by monocrystalline silicon wafers which has a structure and properties that depends on the wafers characteristics and its obtaining process. The material has a use potential in different fields of knowledge and technological application such as solar cells, humidity or gases sensors. The photoluminescence, obtained by the incidence of ultraviolet radiation over the material, has been the most studied property, noting especially the understanding of chemical and physical phenomena present in this material that can even explain its formation process. This study aimed to build a spectrum measuring system of porous silicon photoluminescence to determine the profile of the porous silicon photoemission curve for comparison between the morphology of the porous silicon and its photoluminescence.
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T. F. Paes, A. F. Beloto, L. A. Berni, and L. M. Silva "Spectrum photoluminescence measuring system of porous silicon samples", Proc. SPIE 8785, 8th Iberoamerican Optics Meeting and 11th Latin American Meeting on Optics, Lasers, and Applications, 8785A9 (18 November 2013); https://doi.org/10.1117/12.2021695
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KEYWORDS
Silicon

Etching

Luminescence

Picosecond phenomena

Lamps

Semiconducting wafers

Ultraviolet radiation

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