Paper
9 September 2013 Shot count reduction for non-Manhattan geometries: concurrent optimization of data fracture and mask writer design
Russell Cinque, Tadashi Komagata, Taiichi Kiuchi, Clyde Browning, Patrick Schiavone, Paolo Petroni, Luc Martin, Thomas Quaglio
Author Affiliations +
Abstract
VSB mask writers, which create patterns using a combination of rectangles and 45 degree triangles, are ill-suited to non- Manhattan geometries. This issue is particularly acute for layouts which contain a large fraction of curvilinear “offangle” patterns such as photonic or DRAM designs. Unable to faithfully reproduce the “off-angle” structures, traditional VSB mask writers approximate the desired design using abutted rectangular shots or small shapes to smooth out line edge roughness. Fidelity to the original pattern comes at a cost of increased shot count and reduced throughput. Aselta has developed a novel fracture algorithm to dramatically reduce the shot count of such designs. Using a traditional VSB pattern generator, the new algorithm provides significant shot count reduction. When combined with a modified JBX-3200MV VSB, the shot count is reduced while maintaining the same level of fidelity. The data preparation software tool has also the capability of trading off a more accurate level of fidelity with an even more reduced shot count. The paper will first describe the basic principles of the fracturing algorithm and e-beam writer hardware configuration then demonstrate the advantage of the method on a variety of patterns.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Russell Cinque, Tadashi Komagata, Taiichi Kiuchi, Clyde Browning, Patrick Schiavone, Paolo Petroni, Luc Martin, and Thomas Quaglio "Shot count reduction for non-Manhattan geometries: concurrent optimization of data fracture and mask writer design", Proc. SPIE 8880, Photomask Technology 2013, 88801F (9 September 2013); https://doi.org/10.1117/12.2028944
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Vestigial sideband modulation

Tolerancing

Algorithm development

Line edge roughness

Photomasks

Point spread functions

Printing

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