CrIS detectors are 850 μm diameter detectors with each FPAA consisting of nine photovoltaic detectors arranged in a 3 x 3 pattern. Molecular beam epitaxy (MBE)-grown Hg1-xCdxTe material are used for the detectors fabricated in a modified Double Layer Planar Heterostructure (DLPH) architecture. Each detector has an accompanying cold preamplifier. SWIR and MWIR FPAAs operate at 98 K and the LWIR FPAA at 81 K, permitting the use of passive radiators to cool the detectors. D* requirements at peak 14.01 μm wavelength are ≥ 5.0E+10 Jones for LWIR, ≥ 7.5E+10 Jones at 8.26 μm for MWIR and ≥ 3.0E+11 Jones at peak 4.64 μm wavelength for SWIR. All FPAAs exceeded the D* requirements. Measured mean values for the nine photodiodes in each of the LWIR, MWIR and SWIR FPAAs are D* = 5.3 x 1010 cm-Hz1/2/W at 14.0 μm, 9.6 x 1010 cm-Hz1/2/W at 8.0 μm and 3.4 x 1011 cm-Hz1/2/W at 4.64 μm. |
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Sensors
Long wavelength infrared
Mid-IR
Photodiodes
Quantum efficiency
Short wave infrared radiation
Temperature metrology