Ternary GaAsP alloys, with up to 50% phosphorous content, were grown by hydride vapor phase heteroepitaxy on GaAs substrates, in thicknesses exceeding 0.5 mm. After polishing off the GaAs substrate, the two-photon absorption coefficient of the material was measured at wavelengths between 1064 and 1700 nm, using a tunable picosecond duration laser. Current challenges faced by orientation patterned GaAs crystals for high power MWIR generation are expected to be alleviated through the use of the ternary alloys due to the expected reduction in the two-photon absorption coefficient values.
|