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14 March 2023 Group III-chalcogenide monolayers grown by MOCVD for novel optoelectronic applications (Conference Presentation)
Johannes Glowatzki, Marius Müller, Oliver Massmeyer, Robin Günkel, Sangam Chatterjee, Kerstin Volz
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Proceedings Volume PC12441, Light-Emitting Devices, Materials, and Applications XXVII; PC124410K (2023) https://doi.org/10.1117/12.2650115
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Two-dimensional (2D) materials are gaining great attention due to their extraordinary thickness-dependent properties. 2D Ga-VI semiconductors have bandgaps in the UV region making them candidates for several LED concepts. The Indium-containing counterparts of Ga-chalcogenides moreover have small electron effective masses and high mobilities. Hence, 2D III-chalcogenides are promising materials for next-generation optoelectronic applications. We establish metal organic chemical vapor deposition (MOCVD) to find suitable growth routines for 2D materials. We will summarize our current understanding of the MOCVD growth of III-chalcogenides by systematic variation of the growth parameters and correlate the findings to optoelectronic properties of the layers.
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Johannes Glowatzki, Marius Müller, Oliver Massmeyer, Robin Günkel, Sangam Chatterjee, and Kerstin Volz "Group III-chalcogenide monolayers grown by MOCVD for novel optoelectronic applications (Conference Presentation)", Proc. SPIE PC12441, Light-Emitting Devices, Materials, and Applications XXVII, PC124410K (14 March 2023); https://doi.org/10.1117/12.2650115
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KEYWORDS
Metalorganic chemical vapor deposition
Optoelectronics
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