Mr. Scott D. Sitzman Profile

Scott D. Sitzman

Applications Scientist at Aerospace Corp

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Publications (7)

Proceedings Article | 5 March 2022 Paper

Physical failure analysis of stressed and proton-irradiated RF AlGaN-GaN HEMTs with Ni-Pd-Au Schottky contacts

Yongkun Sin, Dmitry Veksler, Patrick Edwards, Miles Brodie, Scott Sitzman, Zachary Lingley

Proceedings Volume 12001, 120010E (2022) https://doi.org/10.1117/12.2606276

KEYWORDS: Field effect transistors, Gallium nitride, Transmission electron microscopy, Palladium, Failure analysis, Metals, Gold, Reliability, Nickel, Ion beams

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Proceedings Article | 4 March 2022 Presentation + Paper

Effect of test temperature and strain rate on elevated temperature tensile tests of Inconel 718 prepared by selective laser melting

Tait McLouth, David Witkin, Julian Lohser, Scott Sitzman, Paul Adams, Glenn Bean, Jenn-Ming Yang, Rafael Zaldivar

Proceedings Volume 11992, 1199205 (2022) https://doi.org/10.1117/12.2613475

KEYWORDS: Oxidation, Heat treatments, Diffusion, Scanning electron microscopy, Additive manufacturing

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Proceedings Article | 5 March 2021 Presentation + Paper

Out-diffusion of Pd as part of degradation mechanisms in RF AlGaN-GaN HEMTs with Ni-Pd-Au Schottky contacts: part II

Yongkun Sin, Dmitry Veksler, William Hubbard, Scott Sitzman, Miles Brodie, Zachary Lingley, Neil Ives

Proceedings Volume 11686, 116862A (2021) https://doi.org/10.1117/12.2576910

KEYWORDS: Field effect transistors, Palladium, Gallium nitride, Transmission electron microscopy, Silicon carbide, Reliability, Strain analysis, Physics, Manufacturing

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Proceedings Article | 27 February 2020 Paper

Out-diffusion of Pd as a potential degradation mechanism in GaN HEMTs with Ni-Pd-Au Schottky contacts

Yongkun Sin, Dmitry Veksler, William Hubbard, Miles Brodie, Scott Sitzman, Zachary Lingley

Proceedings Volume 11280, 112801I (2020) https://doi.org/10.1117/12.2543432

KEYWORDS: Palladium, Field effect transistors, Gallium nitride, Transmission electron microscopy, Nickel, Reliability, Gold, Silicon carbide, Metals

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Proceedings Article | 1 March 2019 Paper

Electrical and structural characteristics of aged RF GaN HEMTs and irradiated high-power GaN HEMTs with protons and heavy ions

Yongkun Sin, Dmitry Veksler, Jeremy Bonsall, Scott Sitzman, Miles Brodie, Zachary Lingley, Brendan Foran

Proceedings Volume 10918, 109181B (2019) https://doi.org/10.1117/12.2507016

KEYWORDS: Field effect transistors, Gallium nitride, Transmission electron microscopy, Reliability, Strain analysis, Radiation effects, Amplifiers

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Proceedings Article | 5 June 2018 Paper

Effects of adhesion layer composition on the environmental durability of protected silver mirrors

Kelsey Folgner, Chung-Tse Chu, Scott Sitzman, Sean Stuart, Zachary Lingley, James Barrie

Proceedings Volume 10691, 106910X (2018) https://doi.org/10.1117/12.2323720

KEYWORDS: Mirrors, Corrosion, Silver, Interfaces, Reflectivity, Chromium, Photomicroscopy, Transmission electron microscopy, Nickel, Chemical analysis

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Proceedings Article | 21 July 2004 Paper

Introduction to EBSD analysis of micro- to nanoscale microstructures in metals and ceramics

Scott Sitzman

Proceedings Volume 5392, (2004) https://doi.org/10.1117/12.542082

KEYWORDS: Scanning electron microscopy, Crystals, Diffraction, Statistical analysis, Thin films, Chemical analysis, Ceramics, Crystallography, Copper, Metals

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Showing 5 of 7 publications

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