We report state-of-the-art results for 1180nm (narrow linewidth) laser diodes based on GaInNAs quantum wells and show results for ridge waveguide DBR laser diode including its reliability tests. Manuscript demonstrates 500 mW output power in continuous-wave operation at room temperature, wide single mode tuning region and narrow linewidth operation. Devices reached narrow linewidth operation (>250 kHz) across their operation band.
Jukka Viheriälä, Antti T. Aho, Heikki Virtanen, Mervi Koskinen, Michael Dumitrescu, and Mircea Guina, "1180 nm GaInNAs quantum well based high power DBR laser diodes," Proc. SPIE 10086, High-Power Diode Laser Technology XV, 100860K (Presented at SPIE LASE: January 31, 2017; Published: 24 February 2017); https://doi.org/10.1117/12.2251317.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon