Atomically-thin two-dimensional (2D) metal chalcogenides have emerged as an exciting class of materials which have the potential to enable numerous new applications that range from electronics to photonics. Developing new methods for controlled synthesis and manipulation of these layered materials is crucial for emerging applications in functional devices. Here, we demonstrate non-equilibrium laser-based approaches to form and deliver atoms, cluster or stoichiometric nanoparticles with tunable kinetic energies for the synthesis and processing of 2D layered semiconductors. Utilizing the stoichiometric nanoparticles as feedstocks, we demonstrate the formation of either small domain nanosheet networks (~ 20 nm) or large crystalline domains (~100 µm). On the other hand, atomic precursors with tunable kinetic energies are used in doping, alloying and conversion of 2D monolayers. Patterned arrays of lateral heterojunctions between 2D layered semiconductors, MoSe2/MoS2, are formed by e-beam lithography and selective conversion processes. Moreover, we explore the nonequilibrium, bottom-up synthesis of single crystalline monolayers of MoSe2-x with controllable levels of Se vacancies far beyond intrinsic levels (up to 20 %) exhibiting unique optical and electrical properties. These non-equilibrium laser-based approaches provide unique synthesis and processing opportunities that are not easily accessible through conventional methods.
Masoud Mahjouri-Samani, Christopher M. Rouleau, Alexander A. Puretzky, Gyula Eres, Kai Xiao, Gerd Duscher, Mina Yoon, and David B. Geohegan, "New approaches for synthesis and processing of 2D materials (Conference Presentation)," Proc. SPIE 10093, Synthesis and Photonics of Nanoscale Materials XIV, 1009303 (Presented at SPIE LASE: January 30, 2017; Published: 21 April 2017); https://doi.org/10.1117/12.2253430.5389862305001.
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