Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.
Zacharie Jehl, Daniel Suchet, Anatole Julian, Cyril Bernard, Naoya Miyashita, Francois Gibelli, Yoshitaka Okada, and Jean-Francois Guillemolles, "Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells," Proc. SPIE 10099, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI, 100990N (Presented at SPIE OPTO: January 31, 2017; Published: 24 February 2017); https://doi.org/10.1117/12.2250473.
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