We demonstrate an entirely new method to probe quantum measurement phenomena in semiconductor quantum dot (QD) spin qubits . In addition to providing direct evidence for the quantum nature of solid state qubits, we show that our method has practical importance since it provides a completely alternative route for measuring ensemble and quantum dephasing times, T2* and T2, using only repeated projective measurements and without the need for coherent spin control. Our approach is based on measuring time-correlators of a spin qubit in an optically active QD beyond the second order. We utilize a quantum dot spin-storage structure to initialize a single electron spin in a quantum dot subject to a magnetic field applied in Voigt geometry through tunnel ionization and perform repeated projective measurements of the spin at times t1 and t2. This measurement is repeated, corresponding to ensemble averaging, and the resulting third-order time correlations reveals rich physics: For times t1 or t2 < T2* Larmor precession is observed which reveals the ensemble dephasing time T2*. Importantly, even though the time-correlators were obtained through averaging many measurements for times t1 and t2 > T2* oscillations are observed that decay with the dephasing time T2 and allow its determination even without the need for coherent spin control. Finally, combining the third-order time correlator with the second-order time correlator allows to demonstrate a violation of Leggett-Garg type inequalities for certain times providing clear evidence for the quantum nature of the quantum dot spin.  A. Bechtold et al. Phys. Rev. Lett. 117, 027402 (2016)
Kai Müller, Alexander Bechtold, Fuxiang Li, Tobias Simmet, Nikolai A. Sinitsyn, and Jonathan J. Finley, "Optically-probing spin qubit coherence without coherent control (Conference Presentation)," Proc. SPIE 10102, Ultrafast Phenomena and Nanophotonics XXI, 101020F (Presented at SPIE OPTO: January 31, 2017; Published: 19 April 2017); https://doi.org/10.1117/12.2252812.5391450797001.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon