Ultrafast electrically driven light emitter is a critical component in the development of the high bandwidth free-space and on-chip optical communications. Traditional semiconductor based light sources for integration to photonic platform have therefore been heavily studied over the past decades. However, there are still challenges such as absence of monolithic on-chip light sources with high bandwidth density, large-scale integration, low-cost, small foot print, and complementary metal-oxide-semiconductor (CMOS) technology compatibility. Here, we demonstrate the first electrically driven ultrafast graphene light emitter that operate up to 10 GHz bandwidth and broadband range (400 ~ 1600 nm), which are possible due to the strong coupling of charge carriers in graphene and surface optical phonons in hBN allow the ultrafast energy and heat transfer. In addition, incorporation of atomically thin hexagonal boron nitride (hBN) encapsulation layers enable the stable and practical high performance even under the ambient condition. Therefore, electrically driven ultrafast graphene light emitters paves the way towards the realization of ultrahigh bandwidth density photonic integrated circuits and efficient optical communications networks.
Youngduck Kim, Yuanda Gao, Ren-Jye Shiue, Lei Wang, Ozgur Burak Aslan, Hyungsik Kim, Andrei M. Nemilentsau, Tony Low, Takashi Taniguchi, Kenji Watanabe, Myung-Ho Bae, Tony F. Heinz, Dirk R. Englund, and James Hone, "Electrically-driven GHz range ultrafast graphene light emitter (Conference Presentation)," Proc. SPIE 10102, Ultrafast Phenomena and Nanophotonics XXI, 101021T (Presented at SPIE OPTO: February 02, 2017; Published: 19 April 2017); https://doi.org/10.1117/12.2252592.5391659191001.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon