III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the “efficiency droop” effect and the high-speed performance is limited by a relatively small -3 dB modulation bandwidth (<100 MHz). InGaN-based LDs were recently studied as a droop-free, high-speed emitter; yet it is associated with speckle-noise and safety concerns. In this paper, we presented the semipolar InGaN-based violet-blue emitting superluminescent diodes (SLDs) as a high-brightness and high-speed light source, combining the advantages of LEDs and LDs. Utilizing the integrated passive absorber configuration, an InGaN/GaN quantum well (QW) based SLD was fabricated on semipolar GaN substrate. Using SLD to excite a YAG:Ce phosphor, white light can be generated, exhibiting a color rendering index of 68.9 and a color temperature of 4340 K. Besides, the opto-electrical properties of the SLD, the emission pattern of the phosphor-converted white light, and the high-speed (Gb/s) visible light communication link using SLD as the transmitter have been presented and discussed in this paper.
Chao Shen, Tien Khee Ng, Changmin Lee, John T. Leonard, Shuji Nakamura, James S. Speck, Steven P. Denbaars, Ahmed Y. Alyamani, Munir M. El-Desouki, and Boon S. Ooi, "Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications," Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041U (Presented at SPIE OPTO: February 02, 2017; Published: 16 February 2017); https://doi.org/10.1117/12.2251144.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon