We report the fabrication process and characterization of high resolution 873 x 500 pixels emissive arrays based on blue or green GaN/InGaN light emitting diodes (LEDs) at a reduced pixel pitch of 10 μm. A self-aligned process along with a combination of damascene metallization steps is presented as the key to create a common cathode which is expected to provide good thermal dissipation and prevent voltage drops between center and side of the micro LED matrix. We will discuss the challenges of a self-aligned technology related to the choice of a good P contact metal and will present our solutions for the realization of the metallic interconnections between the GaN contacts and the higher levels of metallization at such a small pixel pitch. Enhanced control of each technological step allows scalability of the process up to 4 inch LED wafers and production of high quality LED arrays. The very high brightness (up to 107 cd.m-2) and good external quantum efficiency (EQE) of the resulting device make these kind of micro displays suitable for augmented reality or head up display applications.
Ludovic Dupré, Marjorie Marra, Valentin Verney, Bernard Aventurier, Franck Henry, François Olivier, Sauveur Tirano, Anis Daami, and François Templier, "Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications," Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 1010422 (Presented at SPIE OPTO: February 02, 2017; Published: 16 February 2017); https://doi.org/10.1117/12.2252196.
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