ZnO has great potential for devices in the mid IR and the THz range through the use of intersubband (ISB) transitions in multiple quantum wells (MQWs), although exploiting these transitions requires great control of the epitaxial layers as well as of the physics involved. In this work we present an analysis of non-polar ZnO grown homoepitaxially by molecular beam epitaxy on m-plane ZnO substrates as an ISB optical absorber. The MQWs were characterized under a 45°-bevelled multi-pass waveguide configuration allowing the observation at room temperature of an ISB transition in the 4-6 μm region for p-polarized incident light.
Miguel Montes Bajo, Julen Tamayo-Arriola, Arnaud Jollivet, Maria Tchernycheva, François H. Julien, Romain Peretti, Jérôme Faist, Maxime Hugues, Jean-Michel Chauveau, and Adrian Hierro, "Intersubband absorption in m-plane ZnO/ZnMgO MQWs," Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050O (Presented at SPIE OPTO: January 31, 2017; Published: 24 February 2017); https://doi.org/10.1117/12.2252056.
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