In this paper, we analytically describe the parametric amplification in ring resonators using silicon and silicon nitride waveguides. Achievable gain and bandwidth of the ring-based amplifiers are studied taking into account the Kerr nonlinearity for silicon nitride and Kerr nonlinearity as well as two photon absorption and free carrier absorption for silicon waveguides. Both telecom and 2-μm wavelengths are investigated in case of silicon. An approach for obtaining the optimum amplifier design without initiating the comb generation has been introduced. It is shown that there is a trade-off between the input pump and amplifier bandwidth. It is estimated that using optimum designs an amplifier with a gain and bandwidth of 10 dB and 10 GHz could be feasible with silicon ring resonators in 2 μm.
Mahmoud Jazayerifar, Meysam Namdari, Ryan Hamerly, Dodd Gray, Christopher Rogers, and Kambiz Jamshidi, "Feasibility study of optical parametric amplification using CMOS compatible ring resonators," Proc. SPIE 10106, Integrated Optics: Devices, Materials, and Technologies XXI, 101060A (Presented at SPIE OPTO: January 30, 2017; Published: 16 February 2017); https://doi.org/10.1117/12.2252635.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon