We present a novel nanoscale transfer printing (TP) technology which combines a customized nanolithography system with bespoke elastomeric μ-stamps to controllably pick and place diverse semiconductor structures, e.g. nanowires (NWs), Light Emitting Diodes (LEDs) and thin films, onto targeted locations on heterogeneous material surfaces (e.g. polymers, metals, silica, diamond). Notably, our technique allows the parallel printing of semiconductor structures of different materials onto a large area (of 10cm x 10cm) whilst simultaneously yielding sub-micrometric positioning control (down to below 100nm) and low printing time (~20s per print step). In the talk, we will present a variety of hybrid integrated devices fabricated with our TP technique. Emphasis will be given to our recent work using Gallium Nitride (GaN) LEDs and Indium Phosphide (InP) NW lasers as building blocks. Using TP protocols, GaN LEDs fabricated from GaN-on-Si have been integrated onto polymer and thin glass surfaces and onto diamond substrates for mechanically flexible optoelectronic devices and effective device heat management respectively. Additionally, ultra-small InP NW lasers (~5μm long and ~500nm diameter) have been integrated onto multiple heterogeneous substrates, including mechanically flexible (polymers), transparent (silica) and metallic (gold) surfaces. Furthermore, complex spatial patterns with micrometric dimensions have been defined with these nanolasers acting as localised emitters. Finally, we will also introduce our very recent results demonstrating the coupling of InP NW lasers with planar waveguide technology as a back-end hybrid integration technique.
Antonio Hurtado, Benoit J. E. Guilhabert, Michael J. Strain, Nicolas Laurand, Chennupati Jagadish, and Martin D. Dawson, "Nanoscale transfer printing for heterogeneous device integration (Conference Presentation)," Proc. SPIE 10107, Smart Photonic and Optoelectronic Integrated Circuits XIX, 1010707 (Presented at SPIE OPTO: February 01, 2017; Published: 28 April 2017); https://doi.org/10.1117/12.2254260.5393342325001.
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