In this work we study Ge structures grown on silicon substrates. We use photoluminescence and photoreflectance to determine both direct and indirect gap of Ge under tensile strain. The strain is induced by growing the Ge on an InGaAs buffer layer with variable In content. The band energy levels are modeled by a 30 band k·p model based on first principles calculations. Characterization techniques show very good agreement with the calculated energy values.
Dzianis Saladukha, Tomasz J. Ochalski, Felipe Murphy Armando, Michael B. Clavel, and Mantu K. Hudait, "Laser and transistor material on Si substrate," Proc. SPIE 10108, Silicon Photonics XII, 101080E (Presented at SPIE OPTO: January 31, 2017; Published: 20 February 2017); https://doi.org/10.1117/12.2252383.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the conference proceedings. They include the speaker's narration along with a video recording of the presentation slides and animations. Many conference presentations also include full-text papers. Search and browse our growing collection of more than 12,000 conference presentations, including many plenary and keynote presentations.