The realization of efficient III-V lasers directly grown on Si substrates is highly desirable for large-scale and low-cost silicon based optoelectronic integrated circuits. However, it has been hindered by the high threading dislocation (TD) density generated at the interface between III-V compounds and Si substrates. Introducing dislocation filter layers (DFLs) to suppress the TD propagation into the active region becomes a key factor for realising lasers with advanced performance. In this paper, optimization of InGaAs/GaAs DFLs in III-V quantum dot (QD) lasers on Si is demonstrated. Based on these optimized DFLs and other strategies, we have achieved a high performance electrically pumped QD laser on a Si substrate with threshold current density of 62.5 A cm-2, over 105 mW output power, maximum operation temperature of 120 °C and over 100,158 h of extrapolated lifetime.
M. Liao, S. Chen, M. Tang, J. Wu, W. Li, K. Kennedy, I. Ross, A. Seeds, and H. Liu, "Integrating III-V quantum dot lasers on silicon substrates for silicon photonics," Proc. SPIE 10108, Silicon Photonics XII, 101081A (Presented at SPIE OPTO: February 01, 2017; Published: 20 February 2017); https://doi.org/10.1117/12.2249761.
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